A fault-tolerant addressable spin qubit in a natural silicon quantum dot
Takeda, Kenta, Kamioka, Jun, Otsuka, Tomohiro, Yoneda, Jun, Nakajima, Takashi, Delbecq, Matthieu R, Amaha, Shinichi, Allison, Giles, Kodera, Tetsuo, Oda, Shunri, Tarucha, Seigo
Published in Science advances (01.08.2016)
Published in Science advances (01.08.2016)
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Journal Article
Charge sensing and spin-related transport property of p-channel silicon quantum dots
Yamaoka, Yu, Iwasaki, Kazuma, Oda, Shunri, Kodera, Tetsuo
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article
Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors
Simanullang, Marolop, Wisna, G. Bimananda M, Usami, Koichi, Cao, Wei, Kawano, Yukio, Banerjee, Kaustav, Oda, Shunri
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2016)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2016)
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Journal Article
Experimental study on SET/RESET conditions for graphene resistive random access memory
Shindome, Aya, Takahashi, Tsunaki, Oda, Shunri, Uchida, Ken
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors
Takahashi, Tsunaki, Beppu, Nobuyasu, Chen, Kunro, Oda, Shunri, Uchida, Ken
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires
Surawijaya, Akhmadi, Kawano, Yukio, Oda, Shunri
Published in Japanese Journal of Applied Physics (01.03.2015)
Published in Japanese Journal of Applied Physics (01.03.2015)
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Journal Article
Experimental Study on Deformation Potential ( }} ) in MOSFETs: Demonstration of Increased }} at MOS Interfaces and Its Impact on Electron Mobility
Ohashi, Teruyuki, Tanaka, Takahisa, Takahashi, Tsunaki, Oda, Shunri, Uchida, Ken
Published in IEEE journal of the Electron Devices Society (01.09.2016)
Published in IEEE journal of the Electron Devices Society (01.09.2016)
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Journal Article
Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K
Manoharan, M, Tsuchiya, Yoshishige, Oda, Shunri, Mizuta, Hiroshi
Published in Nano letters (01.12.2008)
Published in Nano letters (01.12.2008)
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Journal Article
Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method
Yamazaki, Shotaro, Nakamine, Yoshifumi, Zheng, Ran, Kouge, Masahiro, Ishikawa, Tetsuya, Usami, Koichi, Kodera, Tetsuo, Kawano, Yukio, Oda, Shunri
Published in Japanese Journal of Applied Physics (01.10.2015)
Published in Japanese Journal of Applied Physics (01.10.2015)
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Journal Article
Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching
Nakamine, Yoshifumi, Kodera, Tetsuo, Uchida, Ken, Oda, Shunri
Published in Japanese Journal of Applied Physics (01.11.2011)
Published in Japanese Journal of Applied Physics (01.11.2011)
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Journal Article
Fabrication of nanocrystalline silicon with small spread of particle size by pulsed gas plasma
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