Two modes of HVPE growth of GaN and related macrodefects
Voronenkov, V. V., Bochkareva, N. I., Gorbunov, R. I., Latyshev, P. E., Lelikov, Y. S., Rebane, Y. T., Tsyuk, A. I., Zubrilov, A. S., Popp, U. W., Strafela, M., Strunk, H. P., Shreter, Y. G.
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Published in Physica status solidi. C (01.03.2013)
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Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells
Bochkareva, N I, Ivanov, A M, Klochkov, AV, Shreter, Y G
Published in Journal of physics. Conference series (01.12.2020)
Published in Journal of physics. Conference series (01.12.2020)
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Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer
Voronenkov, V V, Leonidov, A A, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Kogotkov, V S, Zubrilov, A S, Shreter, Y G
Published in Journal of physics. Conference series (01.03.2019)
Published in Journal of physics. Conference series (01.03.2019)
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Light scattering by dislocations in group-III nitrides
Rebane, Y. T., Gorbunov, R. I., Shreter, Y. G.
Published in Physica status solidi. A, Applications and materials science (01.12.2005)
Published in Physica status solidi. A, Applications and materials science (01.12.2005)
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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire
Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
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Strain and microstructure variation in grains of CVD diamond film
Burton, N.C., Steeds, J.W., Meaden, G.M., Shreter, Y.G., Butler, J.E.
Published in Diamond and related materials (01.09.1995)
Published in Diamond and related materials (01.09.1995)
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Journal Article
Two modes of HVPE growth of GaN and related macrodefects
Voronenkov, V V, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Rebane, Y T, Tsyuk, A I, Zubrilov, A S, Popp, U W, Strafela, M, Strunk, H P, Shreter, Y G
Published in arXiv.org (20.02.2019)
Published in arXiv.org (20.02.2019)
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Anisotropic polarization of dislocation-related luminescence in thin ZnSe films
Worschech, L., Ossau, W., Waag, A., Landwehr, G., Hilpert, U., Schreiber, J., Rebane, Y.T., Shreter, Y.G.
Published in Physica. B, Condensed matter (15.12.1999)
Published in Physica. B, Condensed matter (15.12.1999)
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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs
Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Kogotkov, V. S., Rebane, Yu. T., Virko, M. V., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2015)
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Dislocation-related absorption and photoluminescence in deformed n-ZnSe crystals
Shreter, Y.G., Rebane, Y.T., Klyavin, O.V., Aplin, P.S., Axon, C.J., Young, W.T., Steeds, J.W.
Published in Journal of crystal growth (01.02.1996)
Published in Journal of crystal growth (01.02.1996)
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Mechanism of the GaN LED efficiency falloff with increasing current
Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, F. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2010)
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Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells
Bochkareva, N. I., Bogatov, A. L., Gorbunov, R. I., Latyshev, F. E., Zubrilov, A. S., Tsyuk, A. I., Klochkov, A. V., Lelikov, Y. S., Rebane, Y. T., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2009)
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Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs
Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Yu. T., Gorbunov, R. I., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2005)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2005)
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