Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system
Alekseev, A. N., Byrnaz, A. É., Krasovitsky, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’sky, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Shkurko, A. P., Chalyi, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2007)
Get full text
Journal Article
Indium droplet formation during molecular beam epitaxy of InGaN
Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu
Published in Journal of crystal growth (01.10.1999)
Published in Journal of crystal growth (01.10.1999)
Get full text
Journal Article
Pyrometer unit for GaAs substrate temperature control in an MBE system
Aleksandrov, S. E., Gavrilov, G. A., Kapralov, A. A., Sotnikova, G. Yu, Chernykh, D. F., Alekseev, A. N., Dudin, A. L., Kogan, I. V., Shkurko, A. P.
Published in Technical physics (01.01.2004)
Published in Technical physics (01.01.2004)
Get full text
Journal Article
MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen
Petrov, S. I., Kaidash, A. P., Krasovitskii, D. M., Sokolov, I. A., Pogorel’skii, Yu. V., Chalyi, V. P., Shkurko, A. P., Stepanov, M. V., Pavlenko, M. V., Baranov, D. A.
Published in Technical physics letters (01.07.2004)
Published in Technical physics letters (01.07.2004)
Get full text
Journal Article
Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3
Pogorel’skii, M. Yu, Alekseev, A. N., Pogorel’skii, Yu. V., Shkurko, A. P.
Published in Technical physics letters (01.09.2015)
Published in Technical physics letters (01.09.2015)
Get full text
Journal Article
High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures
Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skii, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P.
Published in Technical physics letters (01.08.2002)
Published in Technical physics letters (01.08.2002)
Get full text
Journal Article
Use of molecular beam epitaxy for high-power AlGaAs laser production
Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu, Shkurko, A.P., Ter-Martirosyan, A.L.
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
Get full text
Journal Article
Measurement of the layer thickness on rotating substrates in molecular-beam epitaxy apparatus
Aleksandrov, S. E., Gavrilov, G. A., Sotnikova, G. Yu, Alekseev, A. N., Baranov, D. A., Shkurko, A. P.
Published in Technical physics (01.07.2009)
Published in Technical physics (01.07.2009)
Get full text
Journal Article
High-spin complex [FeL2(NCS)2]·H2O [L = 3,5-di(pyrimidin-2-yl)-4H-1,2,4-triazol-4-amine]: Synthesis and properties
Bushuev, M. B., Krivopalov, V. P., Daletskii, V. A., Varnek, V. A., Sheludyakova, L. A., Yushina, I. V., Shkurko, O. P.
Published in Russian journal of general chemistry (01.08.2010)
Published in Russian journal of general chemistry (01.08.2010)
Get full text
Journal Article
A universal pyrometer for molecular-beam epitaxy setups
Sotnikova, G. Yu, Gavrilov, G. A., Sukhanov, V. L., Chernykh, D. F., Aleksandrov, S. E., Kapralov, A. A., Alekseev, A. N., Shkurko, A. P.
Published in Instruments and experimental techniques (New York) (01.07.2007)
Published in Instruments and experimental techniques (New York) (01.07.2007)
Get full text
Journal Article
Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Published in Technical physics letters (01.04.2008)
Published in Technical physics letters (01.04.2008)
Get full text
Journal Article
Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Kokin, S. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Chalyĭ, V. P., Shkurko, A. P.
Published in Technical physics letters (01.08.2008)
Published in Technical physics letters (01.08.2008)
Get full text
Journal Article
GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer
Alekseev, A. N., Byrnaz, A. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyĭ, V. P., Shkurko, A. P.
Published in Technical physics letters (01.09.2008)
Published in Technical physics letters (01.09.2008)
Get full text
Journal Article
Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Veretekha, A. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Published in Technical physics letters (01.11.2006)
Published in Technical physics letters (01.11.2006)
Get full text
Journal Article
Use of molecular beam epitaxy for high-power AlGaAs laser production
CHALY, V. P, DEMIDOV, D. M, FOKIN, G. A, KARPOV, S. YU, MYACHIN, V. E, POGORELSKY, YU. V, RUSANOVICH, I. YU, SHKURKO, A. P, TER-MARTIROSYAN, A. L
Published in Journal of crystal growth (1995)
Get full text
Published in Journal of crystal growth (1995)
Conference Proceeding