Search Results - "Shin-ichi Nishizawa" :: K.UTB vyhledávací portál

Overvoltage Failure Process of Cascode GaN Field Effect Transistors

by Saito, Wataru, Nishizawa, Shin‐ichi
Published in Physica status solidi. A, Applications and materials science (01.11.2024)

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A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs

by Kato, Hiroaki, Cai, Bozhou, Yuan, Jiuyang, Miyamura, Yoshiji, Nishizawa, Shin‐ichi, Saito, Wataru
Published in Physica status solidi. A, Applications and materials science (01.10.2024)

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Degradation characteristics of SiC power devices for DC circuit breaker by repetitive unclamped inductive switching test

by Sagara, Mitsuhiko, Wada, Keiji, Nishizawa, Shin-ichi
Published in Microelectronics and reliability (01.09.2019)

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Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

by Pedersen, Henrik, Leone, Stefano, Kordina, Olof, Henry, Anne, Nishizawa, Shin-ichi, Koshka, Yaroslav, Janzén, Erik
Published in Chemical reviews (11.04.2012)

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GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

by Nakajima, Akira, Kubota, Shunsuke, Tsutsui, Kazuo, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Iwai, Hiroshi, Nishizawa, Shin-ichi, Ohashi, Hiromichi
Published in IET power electronics (10.04.2018)

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Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

by Lou, Zaiqi, Saito, Wataru, Nishizawa, Shin-ichi
Published in Japanese Journal of Applied Physics (01.05.2021)

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Scaling Design Effects on Surface Buffer IGBT Characteristics

by Saito, Wataru, Nishizawa, Shin-Ichi
Published in IEEE journal of the Electron Devices Society (2022)

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Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

by Hasegawa, Kazunori, Omura, Ichiro, Nishizawa, Shin-ichi
Published in IEEE transactions on industrial electronics (1982) (01.05.2016)

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Paralleled SiC MOSFETs Circuit Breaker with a SiC MPS Diode for Avalanche Voltage Clamping

by Takamori, Taro, Wada, Keiji, Saito, Wataru, Nishizawa, Shin-ichi
Published in IEEE open journal of power electronics (01.01.2024)

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IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

by Lou, Zaiqi, Mamee, Thatree, Hata, Katsuhiro, Takamiya, Makoto, Nishizawa, Shin-ichi, Saito, Wataru
Published in IEEE access (01.01.2023)

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Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

by Ogawa, Taichi, Saito, Wataru, Nishizawa, Shin-Ichi
Published in IEEE journal of the Electron Devices Society (2021)

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Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals

by Mercier, Frédéric, Nishizawa, Shin-ichi
Published in Journal of crystal growth (01.01.2013)

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Mechanism of gate voltage spike under digital gate control at IGBT switching operations

by Lou, Zaiqi, Mamee, Thatree, Hata, Katsuhiro, Takamiya, Makoto, Nishizawa, Shin-ichi, Saito, Wataru
Published in Power electronic devices and components (01.04.2024)

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The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control

by Lou, Zaiqi, Mamee, Thatree, Hata, Katsuhiro, Takamiya, Makoto, Nishizawa, Shin-ichi, Saito, Wataru
Published in Power electronic devices and components (01.10.2023)

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Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control

by Mamee, Thatree, Lou, Zaiqi, Hata, Katsuhiro, Takamiya, Makoto, Nishizawa, Shin-ichi, Saito, Wataru
Published in Power electronic devices and components (01.10.2023)

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Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

by Mercier, Frédéric, Nishizawa, Shin-ichi
Published in Journal of crystal growth (01.03.2011)

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Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

by Yokogawa, Ryo, Kobayashi, Hiroto, Numasawa, Yohichiroh, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.11.2020)

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Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs

by Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Kakushima, Kuniyuki, Hoshii, Takuya, Tsutsui, Kazuo, Iwai, Hiroshi, Nishizawa, Shin-ichi, Omura, Ichiro, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2020)

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