Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction
Bang, Gyeong Sook, Shim, Gi Woong, Shin, Gwang Hyuk, Jung, Dae Yool, Park, Hamin, Hong, Won G, Choi, Jinseong, Lee, Jaeseung, Choi, Sung-Yool
Published in ACS omega (31.05.2018)
Published in ACS omega (31.05.2018)
Get full text
Journal Article
A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C - V Characteristics in Exfoliated MoS2 FET
Hagyoul Bae, Choong-Ki Kim, Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun Kim, Dong-Il Lee, Hyungjun Kim, Sung-Yool Choi, Kyung Cheol Choi, Yang-Kyu Choi
Published in IEEE electron device letters (01.02.2016)
Published in IEEE electron device letters (01.02.2016)
Get full text
Journal Article
Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric
Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, Sung-Yool Choi
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01.09.2016)
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01.09.2016)
Get full text
Conference Proceeding
Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction
Shin, Gwang Hyuk, Park, Cheolmin, Lee, Khang June, Jin, Hyeok Jun, Choi, Sung-Yool
Published in Nano letters (12.08.2020)
Published in Nano letters (12.08.2020)
Get full text
Journal Article
Manufacturing method ofnitrogen-doped porous graphene
SHIN GWANG HYUK, CHOI SUNG YOOL, LEE JAE SEUNG, CHOI JIN SEONG, BANG GYEONG SOOK
Year of Publication 22.11.2019
Get full text
Year of Publication 22.11.2019
Patent
Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction
Koo, Bondae, Shin, Gwang Hyuk, Park, Hamin, Kim, Hojn, Choi, Sung-Yool
Published in Journal of physics. D, Applied physics (08.10.2018)
Published in Journal of physics. D, Applied physics (08.10.2018)
Get full text
Journal Article
Si–MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power
Shin, Gwang Hyuk, Park, Junghoon, Lee, Khang June, Lee, Geon-Beom, Jeon, Hyun Bae, Choi, Yang-Kyu, Yu, Kyoungsik, Choi, Sung-Yool
Published in ACS applied materials & interfaces (20.02.2019)
Published in ACS applied materials & interfaces (20.02.2019)
Get full text
Journal Article
Si-MoS 2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power
Shin, Gwang Hyuk, Park, Junghoon, Lee, Khang June, Lee, Geon-Beom, Jeon, Hyun Bae, Choi, Yang-Kyu, Yu, Kyoungsik, Choi, Sung-Yool
Published in ACS applied materials & interfaces (20.02.2019)
Published in ACS applied materials & interfaces (20.02.2019)
Get full text
Journal Article
Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric
Woo, Myung Hun, Jang, Byung Chul, Choi, Junhwan, Lee, Khang June, Shin, Gwang Hyuk, Seong, Hyejeong, Im, Sung Gap, Choi, Sung‐Yool
Published in Advanced functional materials (17.11.2017)
Published in Advanced functional materials (17.11.2017)
Get full text
Journal Article