Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect
Lee, Gyusoup, Kang, Changyeon, Kim, Seongho, Park, Youngkeun, Shin, Eui Joong, Cho, Byung Jin
Published in IEEE electron device letters (01.01.2024)
Published in IEEE electron device letters (01.01.2024)
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Journal Article
A Novel Split-Gate Ferroelectric FET for a Compact and Energy Efficient Neuron
Lee, Gyusoup, Kim, Hyung Jin, Shin, Eui Joong, Kim, Seongho, Lee, Tae In, Cho, Byung Jin
Published in IEEE electron device letters (01.08.2022)
Published in IEEE electron device letters (01.08.2022)
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Journal Article
Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks
Kim, Min Ju, Lee, Changhyeon, Shin, Eui Joong, Lee, Tae In, Kim, Seongho, Jeong, Jaejoong, Choi, Junhwan, Hwang, Wan Sik, Im, Sung Gap, Cho, Byung Jin
Published in Advanced functional materials (01.10.2021)
Published in Advanced functional materials (01.10.2021)
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Journal Article
Grain Size Engineering Using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory
Lee, Tae In, Kim, Min Ju, Shin, Eui Joong, Lee, Gyusoup, Jeong, Jaejoong, Lee, Yun Hee, Lee, Jung Hoon, Lee, Jaeduk, Cho, Byung Jin
Published in IEEE transactions on electron devices (01.10.2022)
Published in IEEE transactions on electron devices (01.10.2022)
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Journal Article
Performance enhancement of p-type organic thin-film transistors by surface modification of hybrid dielectrics
Kim, Min Ju, Lee, Tae In, Lee, Changhyeon, Shin, Eui Joong, Kim, Seongho, Jeong, Jaejoong, Hwang, Wan Sik, Im, Sung Gap, Cho, Byung Jin
Published in Organic electronics (01.09.2021)
Published in Organic electronics (01.09.2021)
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Journal Article
Channel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment
Lee, Tae In, Kim, Min Ju, Shin, Eui Joong, Lee, Gyusoup, Jeong, Jaejoong, Lee, Yun Hee, Lee, Jung Hoon, Lee, Jaeduk, Cho, Byung Jin
Published in IEEE electron device letters (01.03.2022)
Published in IEEE electron device letters (01.03.2022)
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Journal Article
H 2 High Pressure Annealed Y-Doped ZrO 2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs
Lee, Tae In, Nguyen, Manh-Cuong, Ahn, Hyun Jun, Kim, Min Ju, Shin, Eui Joong, Hwang, Wan Sik, Yu, Hyun-Young, Choi, Rino, Cho, Byung Jin
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current
Lee, Tae In, Ahn, Hyun Jun, Kim, Min Ju, Shin, Eui Joong, Lee, Seung Hwan, Shin, Sung Won, Hwang, Wan Sik, Yu, Hyun-Yong, Cho, Byung Jin
Published in IEEE electron device letters (01.04.2019)
Published in IEEE electron device letters (01.04.2019)
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Journal Article
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO 2 With Record-Low Leakage Current
Lee, Tae In, Ahn, Hyun Jun, Kim, Min Ju, Shin, Eui Joong, Lee, Seung Hwan, Shin, Sung Won, Hwang, Wan Sik, Yu, Hyun-Yong, Cho, Byung Jin
Published in IEEE electron device letters (01.04.2019)
Published in IEEE electron device letters (01.04.2019)
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Journal Article
Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack
Lee, Tae Yoon, Lee, Seung Hwan, Son, Jun Woo, Lee, Sang Jae, Bong, Jae Hoon, Shin, Eui Joong, Kim, Sung Ho, Hwang, Wan Sik, Moon, Jung Min, Choi, Yang Kyu, Cho, Byung Jin
Published in Solid-state electronics (01.02.2020)
Published in Solid-state electronics (01.02.2020)
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Journal Article
H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs
Lee, Tae In, Nguyen, Manh-Cuong, Ahn, Hyun Jun, Kim, Min Ju, Shin, Eui Joong, Hwang, Wan Sik, Yu, Hyun-Young, Choi, Rino, Cho, Byung Jin
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor
Kim, Seongho, Park, Young Keun, Lee, Gyu Soup, Shin, Eui Joong, Ko, Woon San, Lee, Hi Deok, Lee, Ga Won, Cho, Byung Jin
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Hf‐ and Ti‐Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices
Kim, Min Ju, Lee, Changhyeon, Jeong, Jaejoong, Kim, Seongho, Lee, Tae In, Shin, Eui Joong, Hwang, Wan Sik, Im, Sung Gap, Cho, Byung Jin
Published in Advanced electronic materials (01.04.2021)
Published in Advanced electronic materials (01.04.2021)
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Journal Article
Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device
Shin, Eui Joong, Won Shin, Sung, Lee, Seung Hwan, In Lee, Tae, Kim, Min Ju, Jun Ahn, Hyun, Kim, Jae Hwan, Sik Hwang, Wan, Lee, Jaeduk, Cho, Byung Jin
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
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Conference Proceeding