Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect
Shimizu, H., Shima, K., Suzuki, Y., Momose, T., Shimogaki, Y.
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2015)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2015)
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Journal Article
Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs
Tomita, Y., Shioda, T., Sugiyama, M., Shimogaki, Y., Nakano, Y.
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Conference Proceeding
Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxy
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Journal Article
Conference Proceeding
Effect of NH3 on the fabrication of HfN as gate-electrode using MOCVD
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Conference Proceeding
Journal Article
Ethanol-Assisted Flow-Type Supercritical Fluid Deposition of SrRuO3 for Stoichiometric Film Formation
Jung, Kyubong, Zhao, Yu, Momose, Takeshi, Shimogaki, Yukihiro
Published in ECS solid state letters (19.06.2013)
Published in ECS solid state letters (19.06.2013)
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Journal Article
Control of abnormal edge growth in selective area MOVPE of InP
Sugiyama, M., Waki, N., Nobumori, Y., Song, H., Nakano, T., Arakawa, T., Nakano, Y., Shimogaki, Y.
Published in Journal of crystal growth (01.01.2006)
Published in Journal of crystal growth (01.01.2006)
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Conference Proceeding
High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties
Ichikawa, O., Fukuhara, N., Hata, M., Nakano, T., Sugiyama, M., Shimogaki, Y., Nakano, Y.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
The role of gas-phase reactions during chemical vapor deposition of copper from (hfac)Cu(tmvs)
CHAE, Y. K, SHIMOGAKI, Y, KOMIYAMA, H
Published in Journal of the Electrochemical Society (01.12.1998)
Published in Journal of the Electrochemical Society (01.12.1998)
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Journal Article
X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes
Tabuchi, M, Takahashi, R, Araki, M, Hirayama, K, Futakuchi, N, Shimogaki, Y, Nakano, Y, Takeda, Y
Published in Applied surface science (01.06.2000)
Published in Applied surface science (01.06.2000)
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Journal Article
Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE
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Conference Proceeding
Kinetic study of P and As desorption from binary and ternary III–V semiconductors surface by in situ ellipsometry
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Conference Proceeding
Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy
Sugiyama, M., Kusunoki, K., Shimogaki, Y., Sudo, S., Nakano, Y., Nagamoto, H., Sugawara, K., Tada, K., Komiyama, H.
Published in Applied surface science (01.06.1997)
Published in Applied surface science (01.06.1997)
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Journal Article
Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas
Waki, I., Kumtornkittikul, C., Sato, K., Shimogaki, Y., Nakano, Y.
Published in Physica status solidi. B. Basic research (01.12.2002)
Published in Physica status solidi. B. Basic research (01.12.2002)
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Conference Proceeding
MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor
Féron, O, Sugiyama, M, Asawamethapant, W, Futakuchi, N, Feurprier, Y, Nakano, Y, Shimogaki, Y
Published in Applied surface science (01.06.2000)
Published in Applied surface science (01.06.2000)
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