Mechanisms of Hot-Carrier-Induced Threshold-Voltage Shift in High-Voltage p-Type LDMOS Transistors
Chen, J.F., Kuen-Shiuan Tian, Shiang-Yu Chen, Kuo-Ming Wu, Shih, J.R., Wu, K.
Published in IEEE transactions on electron devices (01.12.2009)
Published in IEEE transactions on electron devices (01.12.2009)
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Journal Article
The direct evidence of substrate potential propagation in a gate-grounded NMOS
Yang, Dao-Hong, Chen, Jone F., Wu, Kuo-Ming, Shih, J.R., Lee, Jian-Hsing
Published in Solid-state electronics (01.07.2010)
Published in Solid-state electronics (01.07.2010)
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Journal Article
A Novel 2-Bit/Cell p-Channel Logic Programmable Cell With Pure 90-nm CMOS Technology
Ying-Je Chen, Chia-En Huang, Hsin-Ming Chen, Han-Chao Lai, Shih, J.R., Wu, K., Ya-Chin King, Chrong-Jung Lin
Published in IEEE electron device letters (01.08.2008)
Published in IEEE electron device letters (01.08.2008)
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Journal Article
Self-heating effect in FinFETs and its impact on devices reliability characterization
Liu, S. E., Wang, J. S., Lu, Y. R., Huang, D. S., Huang, C. F., Hsieh, W. H., Lee, J. H., Tsai, Y. S., Shih, J. R., Lee, Y.-H, Wu, K.
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Self-supported electrodes made of LaNi4.25Al0.15Co0.5V0.1 and Ag or Ni for hydrogenation
SHIH, R.-J, SU, Y. Oliver, PERNG, T.-P
Published in International journal of hydrogen energy (01.09.2006)
Published in International journal of hydrogen energy (01.09.2006)
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Journal Article
A junction leakage mechanism and its effects on advance SRAM failure
Maji, D., Liao, P. J., Lee, Y.-H, Shih, J. R., Chen, S. C., Gao, S. H., Lee, J. H., Wu, K.
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
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Conference Proceeding
Low-side driver's failure mechanism in a class-D amplifier under short circuit test and a robust driver device
Jian-Hsing Lee, Shih, J R, Tong-Chern Ong, Wu, Kenneth
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
Prediction of NBTI degradation for circuit under AC operation
Tsai, Y S, Jha, N K, Lee, Y.-H, Ranjan, R, Wang, W, Shih, J R, Chen, M J, Lee, J H, Wu, K
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
Re-investigation of gate oxide breakdown on logic circuit reliability
Huang, Y C, Yew, T Y, Wang, W, Lee, Y.-H, Ranjan, R, Jha, N K, Liao, P J, Shih, J R, Wu, K
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI
Yu-Hui Huang, Shih, J R, Lee, Y H, Hsieh, S, Liu, C C, Wu, K, Chou, H L
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
A new ESD model induced yield loss during chip-on-film package process and it's failure mechanism
Jian-Hsing Lee, Shih, J R, Yu-Hui Huang, Lin, C P, Su, D, Wu, K
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Investigation of multistage linear region drain current degradation and gate-oxide breakdown under hot-carrier stress in BCD HV PMOS
Yu-Hui Huang, Shih, J R, Liu, C C, Lee, Y, Ranjan, R, Puo-Yu Chiang, Dah-Chuen Ho, Wu, K
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Novel ESD protection structure with embedded SCR LDMOS for smart power technology
Jian-Hsing Lee, Shih, J.R., Tang, C.S., Liu, K.C., Wu, Y.H., Shiue, R.Y., Ong, T.C., Peng, Y.K., Yue, J.T.
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)
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Conference Proceeding
The influence of decoupling capacitor on the discharge behavior of fully silcided power-clamped device under HBM ESD event
Jian-Hsing Lee, Shih, J R, Kuan, H P, Wu, Kenneth
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
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Conference Proceeding
High current characteristics of copper interconnect under transmission-line pulse (TLP) stress and ESD zapping
Lee, J.H., Shih, J.R., Yu, K.F., Wu, Y.H., Wu, J.Y., Yang, J.L., Hou, C.S., Ong, T.C.
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
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Conference Proceeding
SILC degradation model to predict area scaling for gate dielectric breakdown in advanced technologies
Chang, S. W., Joshi, K., Liao, P. J., Shih, J. R., Lee, Y.-H
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding