Fabrication of 0.2 μm gate pseudomorphic inverted HEMT by phase-shifting technology
Yamada, H.T, Shigemasa, R, Fujishiro, H.I, Nishi, S, Saito, T
Published in Solid-state electronics (01.09.1995)
Published in Solid-state electronics (01.09.1995)
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Journal Article
Conference Proceeding
Evaluation of InAlAs Schottky characteristics grown by MOCVD
Ohshima, T., Moriguchi, H., Shigemasa, R., Gotoh, S., Tsunotani, M., Kimura, T.
Published in Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) (1998)
Published in Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) (1998)
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Conference Proceeding
Control of electro-chemical etching for uniform 0.1 /spl mu/m gate formation of HEMT
Nitta, Y., Ohshima, T., Shigemasa, R., Nishi, S., Kimura, T.
Published in International Electron Devices Meeting. Technical Digest (1996)
Published in International Electron Devices Meeting. Technical Digest (1996)
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Conference Proceeding
A decision circuit with phase detectors for 10 Gb/s optical communication systems
Shikata, M., Nishino, A., Shigemasa, R., Fujishiro, H.I., Nishi, S., Ushikubo, T.
Published in Proceedings of 1994 IEEE GaAs IC Symposium (1994)
Published in Proceedings of 1994 IEEE GaAs IC Symposium (1994)
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Conference Proceeding