A 25-nm gate-length FinFET transistor module for 32nm node
Chang-Yun Chang, Tsung-Lin Lee, Wann, C., Li-Shyue Lai, Hung-Ming Chen, Chih-Chieh Yeh, Chih-Sheng Chang, Chia-Cheng Ho, Jyh-Cherng Sheu, Tsz-Mei Kwok, Feng Yuan, Shao-Ming Yu, Chia-Feng Hu, Jeng-Jung Shen, Yi-Hsuan Liu, Chen-Ping Chen, Shin-Chih Chen, Li-Shiun Chen, Chen, L., Yuan-Hung Chiu, Chu-Yun Fu, Ming-Jie Huang, Yu-Lien Huang, Shih-Ting Hung, Jhon-Jhy Liaw, Hsien-Chin Lin, Hsien-Hsin Lin, Lin, L.-T.S., Shyue-Shyh Lin, Yuh-Jier Mii, Ou-Yang, E., Ming-Feng Shieh, Chien-Chang Su, Shih-Peng Tai, Hun-Jan Tao, Ming-Huan Tsai, Kai-Ting Tseng, Kin-Weng Wang, Shiang-Bau Wang, Xu, J.J., Fu-Kai Yang, Shu-Tine Yang, Chen-Nan Yeh
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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