Operation of a Latching, Low-Loss, Wideband Microwave Phase-Change Switch Below 1 K
Borodulin, P., El-Hinnawy, N., Graninger, A. L., King, M. R., Padilla, C. R., Upton, L. N., Hinkey, R. T., Schlesinger, T. E., Pesetski, A. A., Sherwin, M. E., Young, R. M.
Published in Journal of low temperature physics (15.02.2019)
Published in Journal of low temperature physics (15.02.2019)
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Journal Article
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T.R., Ezis, A., Nechay, B., Kirby, C.F., Sherwin, M.E., Clarke, R.C., Singh, R.
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs
Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T.R., Hearne, H., Ezis, A., Sherwin, M.E., Clarke, R.C., Singh, R.
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications
Sherwin, M.E., Zolper, J.C., Baca, A.G., Shul, R.J., Howard, A.J., Rieger, D.J., Klem, J.F., Hietala, V.M.
Published in IEEE electron device letters (01.07.1994)
Published in IEEE electron device letters (01.07.1994)
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Journal Article
The growth of InAlP using trimethyl amine alane by chemical beam epitaxy
Munns, G.O., Chen, W.L., Sherwin, M.E., Haddad, G.I.
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
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Journal Article
Conference Proceeding
Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence
SHERWIN, M. E, TERRY, F. L, MUNNS, G. O, HERMAN, J. S, WOELK, E. G, HADDAD, G. I
Published in Journal of electronic materials (01.03.1992)
Published in Journal of electronic materials (01.03.1992)
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Conference Proceeding
Journal Article
Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE
Munns, G.O., Sherwin, M.E., Kwon, Y., Brock, T., Chen, W.L., Pavlidis, D., Haddad, G.I.
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
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Journal Article
Conference Proceeding
Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant
Zolper, J.C., Shenvin, M.E., Baca, A.G., Shul, R.J., Klem, J.F., Hietala, V.M.
Published in IEEE electron device letters (01.12.1994)
Published in IEEE electron device letters (01.12.1994)
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Journal Article
An all-implanted, self-aligned, GaAs JFET with nonalloyed W/p+-GaAs ohmic gate contact
ZOLPER, J. C, BACA, A. G, HIETALA, V. M, SHUL, R. J, HOWARD, A. J, RIEGER, D. J, SHERWIN, M. E, LOVEJOY, M. L, HJALMARSON, H. P, DRAPER, B. L, KLEM, J. F
Published in IEEE transactions on electron devices (01.07.1994)
Published in IEEE transactions on electron devices (01.07.1994)
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Journal Article
Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy
Munns, G.O., Chen, W.L., Sherwin, M.E., Knightly, D., Haddad, G.I., Davis, L., Bhattacharya, P.K.
Published in Journal of crystal growth (01.03.1994)
Published in Journal of crystal growth (01.03.1994)
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Journal Article
Conference Proceeding
Comparison of Mg and Zn gate implants for GaAs n-channel junction field effect transistors
Sherwin, M. E., Zolper, J. C., Baca, A. G., Drummond, T. J., Shul, R. J., Howard, A. J., Rieger, D. J., Schneider, R. P., Klem, J. F.
Published in Journal of electronic materials (01.08.1994)
Published in Journal of electronic materials (01.08.1994)
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Journal Article
The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 μm
Sherwin, M.E., Munns, G.O., Nichols, D.T., Bhattacharya, P.K., Terry, F.L.
Published in Journal of crystal growth (01.05.1992)
Published in Journal of crystal growth (01.05.1992)
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Journal Article
Conference Proceeding
Technical aspects of InGaAs MOMBE — shutter action, system drift, and material quality
Woelk, E., Sherwin, M.E., Munns, G.O., Haddad, G.I.
Published in Journal of crystal growth (01.03.1991)
Published in Journal of crystal growth (01.03.1991)
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Journal Article
The optimization of InxGa1-xAs and InP growth conditions by CBE
SHERWIN, M. E, MUNNS, G. O, ELTA, M. E, WOELK, E. G, CRARY, S. B, TERRY, F. L, HADDAD, G. I
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
Journal Article
The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers
SHERWIN, M. E, NICHOLS, D. T, MUNNS, G. O, BHATTACHARYA, P. K, HADDAD, G. I
Published in Journal of electronic materials (01.12.1991)
Published in Journal of electronic materials (01.12.1991)
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Conference Proceeding
Journal Article
The design of an ECR plasma system and its application to InP grown by CBE
Sherwin, M.E., Munns, G.O., Woelk, E.G., Drummond, T.J., Elta, M.E., Terry, F.L., Haddad, G.I.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Journal Article
Conference Proceeding