Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
Burr, Geoffrey W., Shelby, Robert M., Sidler, Severin, di Nolfo, Carmelo, Junwoo Jang, Boybat, Irem, Shenoy, Rohit S., Narayanan, Pritish, Virwani, Kumar, Giacometti, Emanuele U., Kurdi, Bulent N., Hyunsang Hwang
Published in IEEE transactions on electron devices (01.11.2015)
Published in IEEE transactions on electron devices (01.11.2015)
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Journal Article
MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays
Shenoy, Rohit S, Burr, Geoffrey W, Virwani, Kumar, Jackson, Bryan, Padilla, Alvaro, Narayanan, Pritish, Rettner, Charles T, Shelby, Robert M, Bethune, Donald S, Raman, Karthik V, BrightSky, Matthew, Joseph, Eric, Rice, Philip M, Topuria, Teya, Kellock, Andrew J, Kurdi, Bülent, Gopalakrishnan, Kailash
Published in Semiconductor science and technology (01.10.2014)
Published in Semiconductor science and technology (01.10.2014)
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Journal Article
Exploring the Design Space for Crossbar Arrays Built With Mixed-Ionic-Electronic-Conduction (MIEC) Access Devices
Narayanan, Pritish, Burr, Geoffrey W., Shenoy, Rohit S., Stephens, Samantha, Virwani, Kumar, Padilla, Alvaro, Kurdi, Bulent N., Gopalakrishnan, Kailash
Published in IEEE journal of the Electron Devices Society (01.09.2015)
Published in IEEE journal of the Electron Devices Society (01.09.2015)
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Journal Article
A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density
Khakifirooz, Ali, Anaya, Eduardo, Balasubrahrmanyam, Sriram, Bennett, Geoff, Castro, Daniel, Egler, John, Fan, Kuangchan, Ferdous, Rifat, Ganapathi, Kartik, Guzman, Omar, Ha, Chang Wan, Haque, Rezaul, Harish, Vinaya, Jalalifar, Majid, Jungroth, Owen W., Kang, Sung-Taeg, Karbasian, Golnaz, Kim, Jee-Yeon, Li, Siyue, Madraswala, Aliasgar S., Maddukuri, Srivijay, Mohammed, Amr, Mookiah, Shanmathi, Nagabhushan, Shashi, Ngo, Binh, Patel, Deep, Poosarla, Sai Kumar, Prabhu, Naveen V., Quiroga, Carlos, Rajwade, Shantanu, Rahman, Ahsanur, Shah, Jalpa, Shenoy, Rohit S., Menson, Ebenezer Tachie, Tankasala, Archana, Thirumala, Sandeep Krishna, Upadhyay, Sagar, Upadhyayula, Krishnasree, Velasco, Ashley, Vemula, Nanda Kishore Babu, Venkataramaiah, Bhaskar, Zhou, Jiantao, Pathak, Bharat M., Kalavade, Pranav
Published in 2023 IEEE International Solid- State Circuits Conference (ISSCC) (19.02.2023)
Published in 2023 IEEE International Solid- State Circuits Conference (ISSCC) (19.02.2023)
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Conference Proceeding
A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3 Gb/mm2 Bit Density
Khakifirooz, Ali, Anaya, Eduardo, Balasubrahmanyam, Sriram, Bennett, Geoff, Castro, Daniel, Egler, John, Fan, Kuangchan, Ferdous, Rifat, Ganapathi, Kartik, Guzman, Omar, Ha, Chang Wan, Haque, Rezaul, Harish, Vinaya, Jalalifar, Majid, Jungroth, Owen W., Kang, Sung-Taeg, Karbasian, Golnaz, Kim, Jee-Yeon, Li, Siyue, Madraswala, Aliasgar S., Maddukuri, Srivijay, Mohammed, Amr, Mookiah, Shanmathi, Nagabhushan, Shashi, Ngo, Binh, Patel, Deep, Poosarla, Sai Kumar, Prabhu, Naveen V., Quiroga, Carlos, Rajwade, Shantanu, Rahman, Ahsanur, Shah, Jalpa, Shenoy, Rohit S., Menson, Ebenezer Tachie, Tankasala, Archana, Thirumala, Sandeep Krishna, Upadhyay, Sagar, Upadhyayula, Krishnasree, Velasco, Ashley, Vemula, Nanda Kishore Babu, Venkataramaiah, Bhaskar, Zhou, Jiantao, Pathak, Bharat M., Kalavade, Pranav
Published in IEEE solid-state circuits letters (10.06.2023)
Published in IEEE solid-state circuits letters (10.06.2023)
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Journal Article
Optimization of extrinsic source/drain resistance in ultrathin body double-gate FETs
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Conference Proceeding
Overview of candidate device technologies for storage-class memory
Burr, G W, Kurdi, B N, Scott, J C, Lam, C H, Gopalakrishnan, K, Shenoy, R S
Published in IBM journal of research and development (01.07.2008)
Published in IBM journal of research and development (01.07.2008)
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Journal Article
On the Origin of Steep I - V Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices
Padilla, Alvaro, Burr, Geoffrey W., Shenoy, Rohit S., Raman, Karthik V., Bethune, Donald S., Shelby, Robert M., Rettner, Charles T., Mohammad, Juned, Virwani, Kumar, Narayanan, Pritish, Deb, Arpan K., Pandey, Rajan K., Bajaj, Mohit, Murali, K. V. R. M., Kurdi, Bulent N., Gopalakrishnan, Kailash
Published in IEEE transactions on electron devices (01.03.2015)
Published in IEEE transactions on electron devices (01.03.2015)
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Journal Article
A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm 2 Bit Density
Khakifirooz, Ali, Anaya, Eduardo, Balasubrahmanyam, Sriram, Bennett, Geoff, Castro, Daniel, Egler, John, Fan, Kuangchan, Ferdous, Rifat, Ganapathi, Kartik, Guzman, Omar, Ha, Chang Wan, Haque, Rezaul, Harish, Vinaya, Jalalifar, Majid, Jungroth, Owen W., Kang, Sung-Taeg, Karbasian, Golnaz, Kim, Jee-Yeon, Li, Siyue, Madraswala, Aliasgar S., Maddukuri, Srivijay, Mohammed, Amr, Mookiah, Shanmathi, Nagabhushan, Shashi, Ngo, Binh, Patel, Deep, Poosarla, Sai Kumar, Prabhu, Naveen V., Quiroga, Carlos, Rajwade, Shantanu, Rahman, Ahsanur, Shah, Jalpa, Shenoy, Rohit S., Menson, Ebenezer Tachie, Tankasala, Archana, Thirumala, Sandeep Krishna, Upadhyay, Sagar, Upadhyayula, Krishnasree, Velasco, Ashley, Vemula, Nanda Kishore Babu, Venkataramaiah, Bhaskar, Zhou, Jiantao, Pathak, Bharat M., Kalavade, Pranav
Published in IEEE solid-state circuits letters (2023)
Published in IEEE solid-state circuits letters (2023)
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Journal Article
30.2 A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm2 Bit Density
Khakifirooz, Ali, Balasubrahmanyam, Sriram, Fastow, Richard, Gaewsky, Kristopher H., Ha, Chang Wan, Haque, Rezaul, Jungroth, Owen W., Law, Steven, Madraswala, Aliasgar S., Ngo, Binh, Naveen Prabhu, V, Rajwade, Shantanu, Ramamurthi, Karthikeyan, Shenoy, Rohit S., Snyder, Jacqueline, Sun, Cindy, Thimmegowda, Deepak, Pathak, Bharat M., Kalavade, Pranav
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
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Conference Proceeding
COARSE PASS AND FINE PASS MULTI-LEVEL NVM PROGRAMMING
MADRASWALA, Aliasgar S, KALAVADE, Pranav, GUO, Xin, SEBASTIAN, Donia, SHENOY, Rohit S, KHAKIFIROOZ, Ali
Year of Publication 17.07.2024
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Year of Publication 17.07.2024
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