Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium-Tin-Oxide Gate Electrode
Chang, Chih-Yao, Wang, Chien-Sheng, Wang, Ching-Yao, Shen, Yao-Luen, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
Get full text
Journal Article
Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias
Chang, Chih-Yao, Shen, Yao-Luen, Wang, Ching-Yao, Tang, Shun-Wei, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
Get full text
Journal Article
Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias
Lin, Ya-Xun, Chao, Der-Sheng, Liang, Jenq-Horng, Shen, Yao-Luen, Huang, Chih-Fang, Hall, Steve, Mitrovic, Ivona Z.
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
Get full text
Journal Article
Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted
Chang, Chih-Yao, Shen, Yao-Luen, Tang, Shun-Wei, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Wu, Yuh-Renn, Huang, Chih-Fang
Published in Applied physics express (01.11.2022)
Published in Applied physics express (01.11.2022)
Get full text
Journal Article
Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted
Chang, Chih-Yao, Wu, Kuan-Ju, Shen, Yao-Luen, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang
Published in 2021 Device Research Conference (DRC) (20.06.2021)
Published in 2021 Device Research Conference (DRC) (20.06.2021)
Get full text
Conference Proceeding