Electronic structure theory and mechanisms of the oxide trapped hole annealing process
Karna, S.P., Pineda, A.C., Pugh, R.D., Shedd, W.M., Oldham, T.R.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
Get full text
Journal Article
The Impact of Total Ionizing Dose on Unhardened SRAM Cell Margins
Xiaoyin Yao, Hindman, N., Clark, L.T., Holbert, K.E., Alexander, D.R., Shedd, W.M.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
Get full text
Journal Article
The effect of network topology on proton trapping in amorphous SiO 2
Pineda, A C, Karna, S P, Kurtz, H A, Shedd, W M, Pugh, R D
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
Get full text
Journal Article
Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO2
Kama, S.P, Kurtz, H.A, Shedd, W.M, Pugh, R.D
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
Get full text
Journal Article
Interaction of H+/H0 with O atoms in thin SiO2 films : a first-principles quantum mechanical study
KARNA, S. P, PUGH, R. D, SHEDD, W. M, SINGARAJU, B. B. K
Published in Journal of non-crystalline solids (01.09.1999)
Published in Journal of non-crystalline solids (01.09.1999)
Get full text
Conference Proceeding
Journal Article
SOS Device radiation effects and hardening
Buchanan, B.L., Neamen, D.A., Shedd, W.M.
Published in IEEE transactions on electron devices (01.08.1978)
Published in IEEE transactions on electron devices (01.08.1978)
Get full text
Journal Article
SCHOTTKY BARRIER INFRARED DETECTOR ARRAYS WITH CHARGE COUPLED DEVICE READOUT
YANG; ANDREW C, ROOSILD; SVEN A, SHEDD; WALTER M, SHEPHERD, JR.; FREEMAN D
Year of Publication 26.08.1975
Get full text
Year of Publication 26.08.1975
Patent