The Impact of Total Ionizing Dose on Unhardened SRAM Cell Margins
Xiaoyin Yao, Hindman, N., Clark, L.T., Holbert, K.E., Alexander, D.R., Shedd, W.M.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
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Journal Article
Electronic structure theory and mechanisms of the oxide trapped hole annealing process
Karna, S.P., Pineda, A.C., Pugh, R.D., Shedd, W.M., Oldham, T.R.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
The effect of network topology on proton trapping in amorphous SiO/sub 2
Pineda, A.C., Karna, S.P., Kurtz, H.A., Shedd, W.M., Pugh, R.D.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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Journal Article
Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO/sub 2
Kama, S.P., Kurtz, H.A., Shedd, W.M., Pugh, R.D.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
New fundamental defects in a-SiO/sub 2
Karna, S.P., Kurtz, H.A., Shedd, W.M., Pugh, R.D., Singaraju, B.K.
Published in IEEE transactions on nuclear science (01.12.1999)
Published in IEEE transactions on nuclear science (01.12.1999)
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Journal Article
The effect of network topology on proton trapping in amorphous SiO 2
Pineda, A C, Karna, S P, Kurtz, H A, Shedd, W M, Pugh, R D
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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Journal Article
The effect of near-interface network strain on proton trapping in SiO/sub 2
Vanheusden, K., Korambath, P.P., Kurtz, H.A., Karna, S.P., Fleetwood, D.M., Shedd, W.M., Pugh, R.D.
Published in IEEE transactions on nuclear science (01.12.1999)
Published in IEEE transactions on nuclear science (01.12.1999)
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Journal Article
Theory of H- in SiO2
EDWARDS, Arthur H, SHEDD, W. M, PUGH, R. D
Published in Journal of non-crystalline solids (01.08.2001)
Published in Journal of non-crystalline solids (01.08.2001)
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Journal Article
Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO2
Kama, S.P, Kurtz, H.A, Shedd, W.M, Pugh, R.D
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
New fundamental defects in a-SiO(2)
Karna, S P, Kurtz, H A, Shedd, W M, Pugh, R D, Singaraju, B K
Published in IEEE transactions on nuclear science (01.12.1999)
Published in IEEE transactions on nuclear science (01.12.1999)
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Journal Article
The effect of near-interface network strain on proton trapping in SiO(2)
Vanheusden, K, Korambath, P P, Kurtz, H A, Karna, S P, Fleetwood, D M, Shedd, W M, Pugh, R D
Published in IEEE transactions on nuclear science (01.12.1999)
Published in IEEE transactions on nuclear science (01.12.1999)
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Journal Article
Characterization of interface traps in SOI material
Vanheusden, K., Warren, W.L., Shedd, W.M., Pugh, R.D., Fleetwood, D.M., Schwank, J.R., Devine, R.A.B.
Published in 1997 IEEE International SOI Conference Proceedings (1997)
Published in 1997 IEEE International SOI Conference Proceedings (1997)
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Conference Proceeding
Improvement of radiation hardness in fully-depleted SOI n-MOSFETs using Ge-implantation
Hua-Fang Wei, Chung, J.E., Kalkhoran, N.M., Namavar, F., Annamalai, N.K., Shedd, W.M.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.12.1994)
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.12.1994)
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Journal Article
Conference Proceeding
Radiation Hardness of a Silicon MESFET 4K x 1 sRAM
Houston, T. W., Hite, L. R., Darley, H. M., Shedd, W. M., Zugich, M. H., Lapierre, D. C.
Published in IEEE transactions on nuclear science (01.01.1984)
Published in IEEE transactions on nuclear science (01.01.1984)
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Journal Article
SOS Device radiation effects and hardening
Buchanan, B.L., Neamen, D.A., Shedd, W.M.
Published in IEEE transactions on electron devices (01.08.1978)
Published in IEEE transactions on electron devices (01.08.1978)
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Journal Article