Miniaturized Ultrawide Bandwidth WiFi 6E Diplexer Implementation Using XBAW RF Filter Technology
Gupta, S., Mehdizadeh, E., Cheema, K., Shealy, J.B.
Published in 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 (19.06.2022)
Published in 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 (19.06.2022)
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Conference Proceeding
Wideband 6 GHz RF Filters for Wi-Fi 6E Using a Unique BAW Process and Highly Sc-doped AlN Thin Film
Kim, D., Moreno, G., Bi, F., Winters, M., Houlden, R., Aichele, D., Shealy, J.B.
Published in 2021 IEEE MTT-S International Microwave Symposium (IMS) (07.06.2021)
Published in 2021 IEEE MTT-S International Microwave Symposium (IMS) (07.06.2021)
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Conference Proceeding
Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs
Trew, R.J., Yueying Liu, Bilbro, L., Weiwei Kuang, Vetury, R., Shealy, J.B.
Published in IEEE transactions on microwave theory and techniques (01.05.2006)
Published in IEEE transactions on microwave theory and techniques (01.05.2006)
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Journal Article
452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon
Shen, Y., Patel, P., Vetury, R., Shealy, J.B.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
Shealy, J.B., Smart, J.A., Shealy, J.R.
Published in IEEE microwave and wireless components letters (01.06.2001)
Published in IEEE microwave and wireless components letters (01.06.2001)
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Journal Article
High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications
Vetury, R., Wei, Y., Green, D.S., Gibb, S.R., Mercier, T.W., Leverich, K., Garber, P.M., Poulton, M.J., Shealy, J.B.
Published in IEEE MTT-S International Microwave Symposium Digest, 2005 (17.06.2005)
Published in IEEE MTT-S International Microwave Symposium Digest, 2005 (17.06.2005)
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Conference Proceeding
Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures
Vetury, R., Shealy, J.B., Green, D.S., McKenna, J., Brown, J.D., Gibb, S.R., Leverich, K., Garber, P.M., Poulton, M.J.
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01.01.2006)
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01.01.2006)
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Conference Proceeding
Optimization of Gallium nitride high power technology for commercial and military applications
Shealy, J.B., Lefevre, M., Anderson, B., Runton, D., Poulton, M.J., Martin, J.
Published in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2009)
Published in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2009)
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Conference Proceeding
Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide
Brown, J.D., Lee, S., Lieu, D., Martin, J., Vetury, R., Poulton, M.J., Shealy, J.B.
Published in 2007 IEEE/MTT-S International Microwave Symposium (01.06.2007)
Published in 2007 IEEE/MTT-S International Microwave Symposium (01.06.2007)
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Conference Proceeding
RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's
Trew, R.J., Liu, Y., Kuang, W., Yin, H., Bilbro, G.L., Shealy, J.B., Vetury, R., Garber, P.M., Poulton, M.J.
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01.06.2006)
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01.06.2006)
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Conference Proceeding
GaN Wide Band Power Integrated Circuits
Conlon, J.P., Zhang, N., Poulton, M.J., Shealy, J.B., Vetury, R., Green, D.S., Brown, J.D., Gibb, S.
Published in 2006 IEEE Compound Semiconductor Integrated Circuit Symposium (01.11.2006)
Published in 2006 IEEE Compound Semiconductor Integrated Circuit Symposium (01.11.2006)
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Conference Proceeding
Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction
Poulton, M.J., Leverich, W.K., Shealy, J.B., Vetury, R., Brown, J.D., Green, D.S., Gibb, S.R.
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01.06.2006)
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01.06.2006)
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Conference Proceeding
High-power AlGaN/GaN FET-based VCO sources
Shealy, J.B., Smart, J.A., Shealy, J.R.
Published in 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) (2001)
Published in 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) (2001)
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Conference Proceeding
High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs
Shealy, J.B., Liu, T.Y., Thompson, M.A., Wilson, R.G., Nguyen, L.D., Mishra, U.K.
Published in IEEE electron device letters (01.12.1995)
Published in IEEE electron device letters (01.12.1995)
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Journal Article
High-speed p/sup +/ GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD
Hashemi, M.M., Shealy, J.B., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.02.1993)
Published in IEEE electron device letters (01.02.1993)
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Journal Article
A 2 watt Ku-band linear (multi-carrier) transmit module for VSAT applications
Shealy, J.B., Jackson, T., Rachlin, A., Poulton, M., Bukhari, N., Ditzler, K., Gong, X., Sumpter, L., Weeks, D.
Published in 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) (1999)
Published in 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) (1999)
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Conference Proceeding
Journal Article
High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD
Shealy, J.B., Hashemi, M.M., Kiziloglu, K., DenBaars, S.P., Mishra, U.K., Liu, T.K., Brown, J.J., Lui, M.
Published in IEEE electron device letters (01.12.1993)
Published in IEEE electron device letters (01.12.1993)
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Journal Article
High frequency, high breakdown AlInAs/GaInAs junction modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD
Shealy, J.B., Hashemi, M.M., Kiziloglu, K., DenBaars, S.P., Misra, U.K., Liu, T.K., Brown, J.J., Liu, M.M.
Published in IEEE transactions on electron devices (01.11.1993)
Published in IEEE transactions on electron devices (01.11.1993)
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Journal Article