Charge Loss Mechanisms in a Localized Trapping Based Nonvolatile Memory Device
Yael Shur, Shacham-Diamand, Y., Lusky, E., Eitair, B., Shappir, A.
Published in 2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel (01.11.2006)
Published in 2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel (01.11.2006)
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Conference Proceeding
NROM cell, has memory layer provided over channel zone and over doped zones with constant thickness
STEIN VON KAMIENSKI, ELARD, BOAZ, EITAN, ASSAF, SHAPPIR, RIEDEL, STEPHAN
Year of Publication 20.11.2003
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Year of Publication 20.11.2003
Patent
Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device
Shappir, A., Levy, D., Geva, G., Shacham-Diamand, Y., Lusky, E., Bloom, I., Eitan, B.
Published in The 22nd Convention on Electrical and Electronics Engineers in Israel, 2002 (2002)
Published in The 22nd Convention on Electrical and Electronics Engineers in Israel, 2002 (2002)
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Conference Proceeding