Spatial characterization of localized charge trapping and charge redistribution in the NROM device
Shappir, Assaf, Levy, David, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz
Published in Solid-state electronics (01.09.2004)
Published in Solid-state electronics (01.09.2004)
Get full text
Journal Article
Lateral charge transport in the nitride layer of the NROM non-volatile memory device
Shappir, Assaf, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz
Published in Microelectronic engineering (01.04.2004)
Published in Microelectronic engineering (01.04.2004)
Get full text
Journal Article
Conference Proceeding
Relaxation of localized charge in trapping-based nonvolatile memory devices
Janai, M., Shappir, A., Bloom, I., Eitan, B.
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Get full text
Conference Proceeding
Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices
Shappir, Assaf, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz
Published in Solid-state electronics (01.05.2003)
Published in Solid-state electronics (01.05.2003)
Get full text
Journal Article