Spatial characterization of localized charge trapping and charge redistribution in the NROM device
Shappir, Assaf, Levy, David, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz
Published in Solid-state electronics (01.09.2004)
Published in Solid-state electronics (01.09.2004)
Get full text
Journal Article
Lateral charge transport in the nitride layer of the NROM non-volatile memory device
Shappir, Assaf, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz
Published in Microelectronic engineering (01.04.2004)
Published in Microelectronic engineering (01.04.2004)
Get full text
Journal Article
Conference Proceeding
Relaxation of localized charge in trapping-based nonvolatile memory devices
Janai, M., Shappir, A., Bloom, I., Eitan, B.
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Get full text
Conference Proceeding
Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices
Shappir, Assaf, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz
Published in Solid-state electronics (01.05.2003)
Published in Solid-state electronics (01.05.2003)
Get full text
Journal Article
Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device
Shappir, A., Levy, D., Geva, G., Shacham-Diamand, Y., Lusky, E., Bloom, I., Eitan, B.
Published in The 22nd Convention on Electrical and Electronics Engineers in Israel, 2002 (2002)
Published in The 22nd Convention on Electrical and Electronics Engineers in Israel, 2002 (2002)
Get full text
Conference Proceeding
Data retention reliability model of NROM nonvolatile memory products
Janai, M., Eitan, B., Shappir, A., Lusky, E., Bloom, I., Cohen, G.
Published in IEEE transactions on device and materials reliability (01.09.2004)
Published in IEEE transactions on device and materials reliability (01.09.2004)
Get full text
Magazine Article
Retention loss characteristics of localized charge-trapping devices
Lusky, E., Shacham-Diamand, Y., Shappir, A., Bloom, I., Cohen, G., Eitan, B.
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
Get full text
Conference Proceeding
NROM Technology for Nonvolatile Memories
Bloom, I., Luski, E., Shappir, A., Janai, M., Eitan, B.
Published in Encyclopedia of Materials: Science and Technology (2011)
Published in Encyclopedia of Materials: Science and Technology (2011)
Get full text
Book Chapter
NROM Window Sensing for 2 and 4-bits per cell Products
Shappir, A., Litsky, E., Cohen, G., Eitan, B.
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
Get full text
Conference Proceeding
Charge Loss Mechanisms in a Localized Trapping Based Nonvolatile Memory Device
Yael Shur, Shacham-Diamand, Y., Lusky, E., Eitair, B., Shappir, A.
Published in 2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel (01.11.2006)
Published in 2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel (01.11.2006)
Get full text
Conference Proceeding
4-bit per cell NROM reliability
Eitan, B., Cohen, G., Shappir, A., Eli Lusky, Givant, A., Janai, M., Bloom, I., Polansky, Y., Dadashev, O., Lavan, A., Sahar, R., Maayan, E.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Get full text
Conference Proceeding
A New Twin Flash™ Cell for 2 and 4 Bit Operation at 63nm Feature Size
Nagel, N., Boubekeur, H., Heinrichsdorff, F., Bach, L., Polei, V., Gupta, J., Pritchard, D., Riedel, S., Strassburg, M., Deppe, J., Bewersdorff-Sarlette, U., Muller, T., Verhoeven, M., Lattard, L., Markert, M., Ruttkowski, E., Mikalo, R., Willer, J., Schulze, N., Ludwig, C., v. Kamienski, E.G. Stein, Mikolajick, T., Isler, M., Kusters, K.-H., Shappir, A., Shur, Y., Lusky, E., Eitan, B., Pissors, V., Sachse, J.-U., Manger, D., Caspary, D., Parascandola, S., Olligs, D.
Published in 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2007)
Published in 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2007)
Get full text
Conference Proceeding