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Published in Physica status solidi. A, Applications and materials science (01.06.2010)
Published in Physica status solidi. A, Applications and materials science (01.06.2010)
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GaN layer growth by HVPE on m-plane sapphire substrates
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Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner
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Year of Publication 21.02.2017
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Method for substrate pretreatment to achieve high-quality III-nitride epitaxy
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Year of Publication 20.05.2014
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Method for Substrate Pretreatment To Achieve High-Quality III-Nitride Epitaxy
VOLKOVA ANNA, SHAPOVALOV LISA, IVANTSOV VLADIMIR, SYRKIN ALEXANDER, SPIBERG PHILIPPE, EL-GHOROURY HUSSEIN S
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Year of Publication 19.12.2013
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HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
SHAPOVALOV LISA, VOLKOVA ANNA, IVANTSOV VLADIMIR, SIZOV VLADIMIR, SOUKHOVEEV VITALI A, KOVALENKOV OLEG V, DMITRIEV VLADIMIR A, USIKOV ALEXANDER, SYRKIN ALEXANDER L
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Year of Publication 11.02.2014
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