The Collaborative Production Management System of Power Enterprises Based on Online Information Sharing
Guoji, Yu, Jianxu, Zhong, Shaofeng, Yu, Chongyang, Liao, Yining, Ma
Published in Journal of web engineering (01.01.2021)
Published in Journal of web engineering (01.01.2021)
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Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network
Zhao, Yage, Xu, Zhongshan, Tang, Huawei, Zhao, Yusi, Tang, Peishun, Ding, Rongzheng, Zhu, Xiaona, Zhang, David Wei, Yu, Shaofeng
Published in Micromachines (Basel) (31.01.2024)
Published in Micromachines (Basel) (31.01.2024)
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Improvement of FinFET electrical characteristics by hydrogen annealing
Weize Xiong, Gebara, G., Zaman, J., Gostkowski, M., Nguyen, B., Smith, G., Lewis, D., Cleavelin, C.R., Wise, R., Shaofeng Yu, Pas, M., Tsu-Jae King, Colinge, J.P.
Published in IEEE electron device letters (01.08.2004)
Published in IEEE electron device letters (01.08.2004)
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Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits
Jibin Zou, Runsheng Wang, Mulong Luo, Ru Huang, Nuo Xu, Pengpeng Ren, Changze Liu, Weize Xiong, Jianping Wang, Jinhua Liu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang
Published in 2013 Symposium on VLSI Technology (01.06.2013)
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Published in 2013 Symposium on VLSI Technology (01.06.2013)
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A Comprehensive Comparison of Different Wafer/Channel Orientations for Ultrascaled Nanosheet FETs
Zhao, Yusi, Xu, Zhongshan, Ding, Rongzheng, Zhao, Yage, Yu, Shaofeng
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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A Unified Mobility Model for Cryogenic Bulk Silicon Simulations in Wide Doping Range
Tang, Huawei, Xu, Zhongshan, Ding, Rongzheng, Zhao, Yage, Tang, Yanbo, Zhu, Xiaona, Yu, Shaofeng
Published in IEEE transactions on electron devices (11.10.2024)
Published in IEEE transactions on electron devices (11.10.2024)
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Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs
Yang, Qihang, Qi, Guodong, Gan, Weizhuo, Wu, Zhenhua, Yin, Huaxiang, Chen, Tao, Hu, Guangxi, Wan, Jing, Yu, Shaofeng, Lu, Ye
Published in IEEE transactions on electron devices (01.09.2021)
Published in IEEE transactions on electron devices (01.09.2021)
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Mobility enhancement in dual-channel P-MOSFETs
Jongwan Jung, Shaofeng Yu, Lee, M.L., Hoyt, J.L., Fitzgerald, E.A., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.09.2004)
Published in IEEE transactions on electron devices (01.09.2004)
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Design and development of power data service platform based on multi dimension
Mo, Guozhu, Yu, Shaofeng, Liao, Chongyang, Zhong, Jianxu
Published in International journal of emerging electric power systems (18.08.2023)
Published in International journal of emerging electric power systems (18.08.2023)
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Analytical Model of CFET Parasitic Capacitance for Advanced Technology Nodes
Sun, Bingqi, Xu, Zhongshan, Ding, Rongzheng, Yang, Jingwen, Chen, Kun, Xu, Saisheng, Xu, Min, Lu, Ye, Zhu, Xiaona, Yu, Shaofeng, Zhang, David
Published in IEEE transactions on electron devices (01.03.2022)
Published in IEEE transactions on electron devices (01.03.2022)
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The Properties of PdRu/C with respect to the Electro-oxidation of Methanol and Ethanol
Yang, Yingjia, Yu, Shaofeng, Gao, Lizhen, Wang, Xiaomin, Yan, Shaohui
Published in International journal of electrochemical science (01.02.2019)
Published in International journal of electrochemical science (01.02.2019)
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A Novel Zigzag SRAM Bitcell Design in the Complementary FET Framework
Ding, Rongzheng, Liu, Yang, Zhao, Guodong, Xu, Zhongshan, Zhao, Yusi, Tang, Huawei, Zhao, Yage, Xie, Qing, Lu, Ye, Zhu, Xiaona, Zhang, David Wei, Yu, Shaofeng
Published in IEEE transactions on electron devices (01.09.2023)
Published in IEEE transactions on electron devices (01.09.2023)
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Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack
Xu, Zhongshan, Zhao, Guo-Dong, Ding, Rongzheng, Zhao, Yage, Xie, Qing, Lv, Yudong, Chen, Mingyan, Zhu, Xiaona, Yu, Shaofeng
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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