Low dielectric constant materials for microelectronics
Maex, K., Baklanov, M. R., Shamiryan, D., lacopi, F., Brongersma, S. H., Yanovitskaya, Z. S.
Published in Journal of applied physics (01.06.2003)
Published in Journal of applied physics (01.06.2003)
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Journal Article
Improving mechanical robustness of ultralow- k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening
Urbanowicz, A. M., Vanstreels, K., Verdonck, P., Shamiryan, D., De Gendt, S., Baklanov, M. R.
Published in Journal of applied physics (15.05.2010)
Published in Journal of applied physics (15.05.2010)
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Journal Article
SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS
Shamiryan, D., Baklanov, M., Claes, M., Boullart, W., Paraschiv, V.
Published in Chemical engineering communications (01.12.2009)
Published in Chemical engineering communications (01.12.2009)
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Journal Article
High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants
Hellings, G., Mitard, J., Eneman, G., De Jaeger, B., Brunco, D.P., Shamiryan, D., Vandeweyer, T., Meuris, M., Heyns, M.M., De Meyer, K.
Published in IEEE electron device letters (01.01.2009)
Published in IEEE electron device letters (01.01.2009)
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Journal Article
In-line control of Si loss after post ion implantation strip
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Journal Article
Conference Proceeding
Diffusion of solvents in thin porous films
Shamiryan, D., Baklanov, M.R., Lyons, P., Beckx, S., Boullart, W., Maex, K.
Published in Colloids and surfaces. A, Physicochemical and engineering aspects (01.06.2007)
Published in Colloids and surfaces. A, Physicochemical and engineering aspects (01.06.2007)
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Journal Article
Conference Proceeding
Integrated diffusion–recombination model for describing the logarithmic time dependence of plasma damage in porous low- k materials
Kunnen, E., Barkema, G.T., Maes, C., Shamiryan, D., Urbanowicz, A., Struyf, H., Baklanov, M.R.
Published in Microelectronic engineering (01.05.2011)
Published in Microelectronic engineering (01.05.2011)
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Journal Article
Conference Proceeding
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, A., Kubicek, S., Rooyackers, R., Kim, M.-S., Sleeckx, E., Devriendt, K., Shamiryan, D., Vandeweyer, T., Delande, T., Horiguchi, N., Togo, M., Wouters, J.M.D., Jurczak, M., Hoffmann, T., Cockburn, A., Gravey, V., Diehl, D.L.
Published in Solid-state electronics (01.05.2012)
Published in Solid-state electronics (01.05.2012)
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Journal Article
Conference Proceeding
Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films
Hoyas, A. Martin, Schuhmacher, J., Shamiryan, D., Waeterloos, J., Besling, W., Celis, J. P., Maex, K.
Published in Journal of applied physics (01.01.2004)
Published in Journal of applied physics (01.01.2004)
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Journal Article
Investigation of barrier and slurry effects on the galvanic corrosion of copper
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Conference Proceeding
Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density
Degroote, B., Rooyackers, R., Vandeweyer, T., Collaert, N., Boullart, W., Kunnen, E., Shamiryan, D., Wouters, J., Van Puymbroeck, J., Dixit, A., Jurczak, M.
Published in Microelectronic engineering (01.04.2007)
Published in Microelectronic engineering (01.04.2007)
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Journal Article
Factors affecting an efficient sealing of porous low- k dielectrics by physical vapor deposition Ta(N) thin films
Iacopi, F., Tőkei, Zs, Le, Q. T., Shamiryan, D., Conard, T., Brijs, B., Kreissig, U., Van Hove, M., Maex, K.
Published in Journal of applied physics (01.08.2002)
Published in Journal of applied physics (01.08.2002)
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Journal Article
Oxygen chemiluminescence in He plasma as a method for plasma damage evaluation
Urbanowicz, A.M., Shamiryan, D., Baklanov, M.R., De Gendt, S.
Published in Microelectronic engineering (01.10.2008)
Published in Microelectronic engineering (01.10.2008)
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Journal Article
Conference Proceeding
Experimental and Theoretical Studies of Radical Production in RF CCP Discharge at 81-MHz Frequency in \hbox and \hbox Mixtures
Rakhimova, T.V., Braginsky, O.V., Klopovskiy, K.S., Kovalev, A.S., Lopaev, D.V., Proshina, O.V., Rakhimov, A.T., Shamiryan, D., Vasilieva, A.N., Voloshin, D.G.
Published in IEEE transactions on plasma science (01.09.2009)
Published in IEEE transactions on plasma science (01.09.2009)
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Journal Article
Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions
Shamiryan, D, Weidner, K, Gray, W.D, Baklanov, M.R, Vanhaelemeersch, S, Maex, K
Published in Microelectronic engineering (01.10.2002)
Published in Microelectronic engineering (01.10.2002)
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Conference Proceeding
Implementation of high- k and metal gate materials for the 45 nm node and beyond: gate patterning development
Beckx, S., Demand, M., Locorotondo, S., Henson, K., Claes, M., Paraschiv, V., Shamiryan, D., Jaenen, P., Boullart, W., Degendt, S., Biesemans, S., Vanhaelemeersch, S., Vertommen, J., Coenegrachts, B.
Published in Microelectronics and reliability (01.05.2005)
Published in Microelectronics and reliability (01.05.2005)
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Journal Article
Conference Proceeding
Spacer defined FinFET: Active area patterning of sub-20nm fins with high density
Degroote, B., Rooyackers, R., Vandeweyer, T., Collaert, N., Boullart, W., Kunnen, E., Shamiryan, D., Wouters, J., Van Puymbroeck, J., Dixit, A., Jurczak, M.
Published in Microelectronic engineering (01.04.2007)
Published in Microelectronic engineering (01.04.2007)
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