Incorporation and Interaction of Co‐Doped Be and Mg in GaN Grown by Metal‐Organic Chemic Vapor Deposition
McEwen, Benjamin, Rocco, Emma, Meyers, Vincent, Lanjani, Alireza, Omranpour, Shadi, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., Reshchikov, Michael A., Shahedipour‐Sandvik, Fatemeh Shadi
Published in physica status solidi (b) (14.07.2024)
Published in physica status solidi (b) (14.07.2024)
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The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Suvarna, Puneet, Tungare, Mihir, Tripathi, Neeraj, Shahedipour-Sandvik, Fatemeh (Shadi)
Published in Journal of materials research (14.12.2011)
Published in Journal of materials research (14.12.2011)
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Journal Article
Design and characterization of GaN p-i-n diodes for betavoltaic devices
Khan, Muhammad R., Smith, Joshua R., Tompkins, Randy P., Kelley, Stephen, Litz, Marc, Russo, John, Leathersich, Jeff, Shahedipour-Sandvik, Fatemeh (Shadi), Jones, Kenneth A., Iliadis, Agis
Published in Solid-state electronics (01.10.2017)
Published in Solid-state electronics (01.10.2017)
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Journal Article
The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates
Gagnon, Jarod C., Leathersich, Jeffrey M., Shahedipour-Sandvik, Fatemeh (Shadi), Redwing, Joan M.
Published in Journal of crystal growth (01.05.2014)
Published in Journal of crystal growth (01.05.2014)
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Journal Article
Conference Proceeding
HVPE GaN for high power electronic Schottky diodes
Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Mulholland, Gregory, Metzger, Robert, Leach, Jacob H., Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, Fatemeh (Shadi)
Published in Solid-state electronics (01.01.2013)
Published in Solid-state electronics (01.01.2013)
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