A new Schottky-barrier GaAs epitaxial diode for infrared detection
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Conference Proceeding
Channel-length dependence of substrate current characteristic of LDD MOSFET's
Shabde, S.N., Barman, F., Bhattacharyya, A.
Published in IEEE transactions on electron devices (01.09.1985)
Published in IEEE transactions on electron devices (01.09.1985)
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Journal Article
The buried-source VMOS dynamic RAM device
Barnes, J.J., Shabde, S.N., Jenne, F.B.
Published in 1977 International Electron Devices Meeting (1977)
Published in 1977 International Electron Devices Meeting (1977)
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Conference Proceeding
The effects of constant-current stress on gate oxides in LDD MOSFET's
Bhattacharyya, A., Shabde, S.N., Barman, F., Muller, R.S.
Published in IEEE transactions on electron devices (01.04.1987)
Published in IEEE transactions on electron devices (01.04.1987)
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Journal Article
Snapback Induced Gate Dielectric Breakdown in Graded Junction MOS Structures
Shabde, S.N., Simmons, G., Baluni, A., Back, D.
Published in 22nd International Reliability Physics Symposium (01.04.1984)
Published in 22nd International Reliability Physics Symposium (01.04.1984)
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Conference Proceeding