Advanced DC-SF Cell Technology for 3-D NAND Flash
Aritome, S., Yoohyun Noh, Hyunseung Yoo, Eun Seok Choi, Han Soo Joo, Youngsoo Ahn, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Sungjoo Hong, Sungwook Park, Kikkawa, T.
Published in IEEE transactions on electron devices (01.04.2013)
Published in IEEE transactions on electron devices (01.04.2013)
Get full text
Journal Article
A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory
Yoohyun Noh, Youngsoo Ahn, Hyunseung Yoo, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Aritome, S., Sungjoo Hong, Sungwook Park
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Get full text
Conference Proceeding
CVD-cobalt for low resistance word line electrode of 3D NAND flash memory
MinSoo Kim, SungJin Whang, YoungJin Lee, JooHee Han, JinHae Choi, ByoungHo Lee, DongSun Sheen, SeungHo Pyi, JinWoong Kim
Published in 2011 IEEE International Interconnect Technology Conference (01.05.2011)
Published in 2011 IEEE International Interconnect Technology Conference (01.05.2011)
Get full text
Conference Proceeding
Incorporation Effect of Thin Al 2 O 3 Layers on ZrO 2 –Al 2 O 3 Nanolaminates in a Composite Oxide–High-κ-Oxide Stack for Floating-Gate Flash Memory Devices
Joo, Moon Sig, Lee, Seung Ryong, Yang, Hong-Seon, Hong, Kwon, Jang, Se-Aug, Koo, Jaehyoung, Kim, Jaemun, Shin, Seungwoo, Kim, Myungok, Pyi, Seungho, Kwak, Nojung, Kim, Jin Woong
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
Get full text
Journal Article