Effective electron and hole masses in intrinsic and heavily n-type doped GaN and AlN
Persson, Clas, Sernelius, B. E., da Silva, A. F., Ahuja, R., Johansson, Börje
Published in Journal of physics. Condensed matter (08.10.2001)
Published in Journal of physics. Condensed matter (08.10.2001)
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Journal Article
Band-gap tailoring of ZnO by means of heavy Al doping
Sernelius, BE, Berggren, K, Jin, Z, Hamberg, I, I, Granqvist, CG
Published in Physical review. B, Condensed matter (15.06.1988)
Published in Physical review. B, Condensed matter (15.06.1988)
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Journal Article
Optical studies of acceptor centre doped GaAs/AlGaAs quantum wells
Ferreira, A C, Holtz, P O, Sernelius, B E, Buyanov, A, Monemar, B, Ekenberg, U, Mauritz, O, Sundaram, M, Campman, K, Merz, J L, Gossard, A C
Published in Solid-state electronics (01.01.1996)
Published in Solid-state electronics (01.01.1996)
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Journal Article
Influence of Si doping on optical properties of wurtzite GaN
Silva, A Ferreira da, Araújo, C Moysés, Sernelius, Bo E, Persson, C, Ahuja, R, Johansson, B
Published in Journal of physics. Condensed matter (08.10.2001)
Published in Journal of physics. Condensed matter (08.10.2001)
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Conference Proceeding
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
Fernandez, J.R.L., Moysés Araújo, C., Ferreira da Silva, A., Leite, J.R., Sernelius, Bo E., Tabata, A., Abramof, E., Chitta, V.A., Persson, C., Ahuja, R., Pepe, I., As, D.J., Frey, T., Schikora, D., Lischka, K.
Published in Journal of Crystal Growth (2001)
Published in Journal of Crystal Growth (2001)
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Conference Proceeding