Effectiveness of a Guard Ring Utilizing an Inversion Layer Surrounding a Through Silicon Via
Kim, Kyung-Do, Jun, Byung-Jun, Kim, Jae-Bum, Choi, Kang-Sik, Cha, Seon-Yong, Lee, Jung-Hoon, Jeong, Jae-Goan, Lee, Seok-Hee, Lee, Jong-Ho
Published in IEEE electron device letters (01.03.2015)
Published in IEEE electron device letters (01.03.2015)
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Journal Article
Random Telegraph Signal-Like Fluctuation Created by Fowler--Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor
Kim, Heesang, Oh, Byoungchan, Kim, Kyungdo, Cha, Seon-Yong, Jeong, Jae-Goan, Hong, Sung-Joo, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol
Published in Japanese Journal of Applied Physics (01.09.2010)
Published in Japanese Journal of Applied Physics (01.09.2010)
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Journal Article
Study on the Vt variation and bias temperature instability characteristics of TiN/W and TiN metal buried-gate transistor in DRAM application
Tae-Su Jang, Kyung-do Kim, Min-Soo Yoo, Yong-Taik Kim, Seon-Yong Cha, Jae-Goan Jeong, Seok-Hee Lee
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Modeling and Demonstration for Multi-level Weight Conductance in Computational FeFET Memory Cell
Koo, Won-Tae, Lee, Jae-Gil, Lee, Gunhee, Lee, Woocheol, Woo, Jungwook, Suh, Dong Ik, Kim, Joongsik, Lee, Hyung Dong, Lee, Seho, Yi, Jaeyun, Cha, Seon Yong
Published in 2024 IEEE International Memory Workshop (IMW) (12.05.2024)
Published in 2024 IEEE International Memory Workshop (IMW) (12.05.2024)
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Conference Proceeding
Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays
Kwon, Youngjae, Koo, Won-Tae, Park, Sangsu, Suh, Dong Ik, Lee, Gunhee, Lee, Hyung Dong, Ahn, Youngbae, Kim, Dohee, Ryu, Seungwook, Em, Hoseok, Kang, Seokjoon, Jeong, Chang Won, Cheon, Junho, Choi, Hyejung, Kim, Soo Gil, Lee, Seho, Yi, Jaeyun, Cha, Seon Yong
Published in 2024 IEEE International Memory Workshop (IMW) (12.05.2024)
Published in 2024 IEEE International Memory Workshop (IMW) (12.05.2024)
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Conference Proceeding
A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge
Kyung-Do Kim, Min-Kyu Jeong, Sung-Min Cho, Ho-Jung Kang, Byung-Jun Jun, Jae-Bum Kim, Kang-Sik Choi, Seon-Yong Cha, Jung-Hoon Lee, Jae-Goan Jeong, Sung-Joo Hong, Jong-Ho Lee
Published in 2013 Symposium on VLSI Technology (01.06.2013)
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Published in 2013 Symposium on VLSI Technology (01.06.2013)
Conference Proceeding
First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size
Seo, Soo Man, Aikawa, Hisanori, Kim, Soo Gil, Nagase, Toshihiko, Ito, Yuich, Ha, Tae Jung, Yoshino, Kenichi, Jung, Bo Kyung, Oikawa, Tadaaki, Jung, Ku Youl, Moon, Hyun In, Kim, Bum Su, Matsuoka, Fumiyoshi, Hatsuda, Kosuke, Hoya, Katsuhiko, Kim, Seiyon, Lee, Sung-Hoon, Na, Myung-Hee, Cha, Seon Yong
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding
Demonstration of Ultra-thin Ferroelectric/dielectric and Anti-ferroelectric/dielectric Bilayers for Future DRAM Cell Capacitors
Suh, Dong Ik, Koo, Won-Tae, Kim, Youngmo, Kim, Ja-Yong, Ryu, Seung Wook, Jeon, Heeyoung, Im, Ki Vin, Lee, Gwangyeob, Youn, Taeone, Jeong, Hyeonho, Lee, Seho, Na, Myung-Hee, Cha, Seon Yong
Published in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (07.03.2023)
Published in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (07.03.2023)
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Conference Proceeding
Mobility Enhancement of Peripheral PMOSFET Using e-SiGe Source and Drain in Sub-50nm DRAM
Jeong-Soo Park, Yun-Ik Son, Yu-Jun Lee, Ki-Bong Nam, Byung-Il Kwak, Young-Ho Lee, Jae-Young Kim, Seon-Yong Cha, Jae-Goan Jeong, Sung-Joo Hong
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
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Conference Proceeding
Highly scalable Z-RAM with remarkably long data retention for DRAM application
Tae-Su Jang, Joong-Sik Kim, Sang-Min Hwang, Young-Hoon Oh, Kwang-Myung Rho, Seoung-Ju Chung, Su-Ock Chung, Jae-Geun Oh, Bhardwaj, S., Jungtae Kwon, Kim, D., Nagoga, M., Yong-Taik Kim, Seon-Yong Cha, Seung-Chan Moon, Sung-Woong Chung, Sung-Joo Hong, Sung-Wook Park
Published in 2009 Symposium on VLSI Technology (01.06.2009)
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Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
STI stress-induced degradation of data retention time in DRAM and a new characterizing method for mechanical stress
Tae-Su Jang, Kyung-do Kim, Min-Soo Yoo, Yong-Taik Kim, Seon-Yong Cha, Jae-Goan Jeong, Sung-Joo Hong
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Platinum bottom electrodes formed by electron-beam evaporation for high-dielectric thin films
Cha, Seon Yong, Lee, Hee Chul, Lee, Won Jae, Kim, Ho Gi
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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Conference Proceeding
Journal Article
Study on the Sub-Threshold Margin Characteristics of the Extremely Scaled 3-D DRAM Cell Transistors
Kyung Kyu Min, Il-Woong Kwon, Seehe Cho, Mikyung Kwon, Tae-Su Jang, Tae-Kyung Oh, Yong-Taik Kim, Seon-Yong Cha, Sung-Kye Park, Sung-Joo Hong
Published in 2015 IEEE International Memory Workshop (IMW) (01.05.2015)
Published in 2015 IEEE International Memory Workshop (IMW) (01.05.2015)
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Conference Proceeding
RTS-like fluctuation in Gate Induced Drain Leakage current of Saddle-Fin type DRAM cell transistor
Heesang Kim, Kyungdo Kim, Tae-Kyung Oh, Seon-Yong Cha, Sung-Joo Hong, Sung-Wook Park, Hyungcheol Shin
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Conference Proceeding
A simple method for high-frequency characterization of (Ba,Sr)TiO3 thin film capacitors
Jang, Byung-Tak, Kwak, Dong-Hwa, Cha, Seon-Yong, Lee, Seung-Hoon, Lee, Hee Chul
Published in Integrated ferroelectrics (01.01.1998)
Published in Integrated ferroelectrics (01.01.1998)
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Journal Article