Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials
Jiang, L, Gallagher, J D, Senaratne, C L, Aoki, T, Mathews, J, Kouvetakis, J, Menéndez, J
Published in Semiconductor science and technology (01.11.2014)
Published in Semiconductor science and technology (01.11.2014)
Get full text
Journal Article
Molecular epitaxy of pseudomorphic Ge1−ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4
Wallace, P M, Senaratne, C L, Xu, Chi, Sims, P E, Kouvetakis, J, Menéndez, J
Published in Semiconductor science and technology (09.01.2017)
Published in Semiconductor science and technology (09.01.2017)
Get full text
Journal Article
In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: fundamental properties and device prototypes
Xu, Chi, Gallagher, J D, Wallace, P M, Senaratne, C L, Sims, P, Menéndez, J, Kouvetakis, J
Published in Semiconductor science and technology (14.09.2015)
Published in Semiconductor science and technology (14.09.2015)
Get full text
Journal Article
Molecular epitaxy of pseudomorphic Ge 1− y Sn y ( y = 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge 4 H 10 and SnD 4
Wallace, P M, Senaratne, C L, Xu, Chi, Sims, P E, Kouvetakis, J, Menéndez, J
Published in Semiconductor science and technology (01.02.2017)
Published in Semiconductor science and technology (01.02.2017)
Get full text
Journal Article
Compositional dependence of the direct and indirect band gaps in Ge 1− y Sn y alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n -type materials
Jiang, L, Gallagher, J D, Senaratne, C L, Aoki, T, Mathews, J, Kouvetakis, J, Menéndez, J
Published in Semiconductor science and technology (01.11.2014)
Published in Semiconductor science and technology (01.11.2014)
Get full text
Journal Article
Materials physics of GeSn-based semiconductor lasers
Menéndez, J., Wallace, P.M., Xu, C., Senaratne, C.L., Gallagher, J.D., Kouvetakis, J.
Published in Materials today : proceedings (2019)
Published in Materials today : proceedings (2019)
Get full text
Journal Article
Compositional dependence of the direct and indirect band gaps in $\text{Ge}_{1-y}\text{Sn}_{y}$ alloys from room temperature photoluminescence
Jiang, L, Gallagher, J. D, Senaratne, C. L, Aoki, T, Mathews, J, Kouvetakis, J, Menéndez, J
Year of Publication 02.06.2014
Year of Publication 02.06.2014
Get full text
Journal Article