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Recent progress in Ga2O3 power devices
Higashiwaki, Masataka, Sasaki, Kohei, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu
Published in Semiconductor science and technology (18.01.2016)
Published in Semiconductor science and technology (18.01.2016)
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Metal oxide nanostructures for sensor applications
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Published in Semiconductor science and technology (01.04.2019)
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Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
Noé, Pierre, Vallée, Christophe, Hippert, Françoise, Fillot, Frédéric, Raty, Jean-Yves
Published in Semiconductor science and technology (01.01.2018)
Published in Semiconductor science and technology (01.01.2018)
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An introduction to InP-based generic integration technology
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Published in Semiconductor science and technology (01.08.2014)
Published in Semiconductor science and technology (01.08.2014)
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Dawn of nitride ferroelectric semiconductors: from materials to devices
Wang, Ping, Wang, Ding, Mondal, Shubham, Hu, Mingtao, Liu, Jiangnan, Mi, Zetian
Published in Semiconductor science and technology (01.04.2023)
Published in Semiconductor science and technology (01.04.2023)
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A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications
Rajbhandari, Sujan, McKendry, Jonathan J D, Herrnsdorf, Johannes, Chun, Hyunchae, Faulkner, Grahame, Haas, Harald, Watson, Ian M, O'Brien, Dominic, Dawson, Martin D
Published in Semiconductor science and technology (04.01.2017)
Published in Semiconductor science and technology (04.01.2017)
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GaN FinFETs and trigate devices for power and RF applications: review and perspective
Zhang, Yuhao, Zubair, Ahmad, Liu, Zhihong, Xiao, Ming, Perozek, Joshua, Ma, Yunwei, Palacios, Tomás
Published in Semiconductor science and technology (01.05.2021)
Published in Semiconductor science and technology (01.05.2021)
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Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Hickman, Austin Lee, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Li, Lei, Hwang, James C M, Grace Xing, Huili, Jena, Debdeep
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Published in Semiconductor science and technology (01.04.2021)
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How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
Kunert, Bernardette, Mols, Yves, Baryshniskova, Marina, Waldron, Niamh, Schulze, Andreas, Langer, Robert
Published in Semiconductor science and technology (01.09.2018)
Published in Semiconductor science and technology (01.09.2018)
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Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp
Muramoto, Yoshihiko, Kimura, Masahiro, Nouda, Suguru
Published in Semiconductor science and technology (01.08.2014)
Published in Semiconductor science and technology (01.08.2014)
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A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy
Joyce, Hannah J, Boland, Jessica L, Davies, Christopher L, Baig, Sarwat A, Johnston, Michael B
Published in Semiconductor science and technology (15.09.2016)
Published in Semiconductor science and technology (15.09.2016)
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Wide-bandgap, low-bandgap, and tandem perovskite solar cells
Song, Zhaoning, Chen, Cong, Li, Chongwen, Awni, Rasha A, Zhao, Dewei, Yan, Yanfa
Published in Semiconductor science and technology (01.09.2019)
Published in Semiconductor science and technology (01.09.2019)
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