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Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials
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Measuring valence band offsets in ReSe2/(0001)GaN, ReSe2/(11-22)GaN, and ReSe2/(11-20)GaN heterostructures
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Published in Semiconductor science and technology (31.03.2025)
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Measuring valence band offsets in ReSe 2 /(0001)GaN, ReSe 2 /(11-22)GaN, and ReSe 2 /(11-20)GaN heterostructures
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Tunnel hole injection in a unipolar HgCdTe-based laser diode
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Comparative analysis of Y2O3 and Al2O3 interfacial layers in modulating the electrical properties of ZrO2 and HfO2 on Ge
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Published in Semiconductor science and technology (31.03.2025)
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