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Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe
Kozlov, D V, Ikonnikov, A V, Mazhukina, K A, Morozov, S V, Gavrilenko, V I, Mikhailov, N N, Dvoretsky, S A, Rumyantsev, V V
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Published in Semiconductor science and technology (31.03.2025)
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Room temperature interband cascade lasers near 7.7 µm and dependence on structural quality
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Numerical investigation of split-decoupled gate design for threshold voltage stabilization in p-GaN HEMT
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Modification of TiO 2 template with In 2 S 3 for quasi-epitaxial growth of Sb 2 S 3 thin film solar cells
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Published in Semiconductor science and technology (30.05.2025)
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The effects of sequential annealing in NO and wet-O 2 on interfacial properties and reliability of 4H-SiC (0001) MOS devices
Lu, Wenhao, Ge, Niannian, Wan, Caiping, Xu, Hengyu, Jin, Zhi, Ye, Tianchun, Zhou, Jingtao
Published in Semiconductor science and technology (30.05.2025)
Published in Semiconductor science and technology (30.05.2025)
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Modeling and optimal design of silicon superjunctions considering charge imbalance
Bhargav, P N S, Gurugubelli, Vijaya Kumar
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Published in Semiconductor science and technology (30.05.2025)
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High performance solar-blind photodetectors based on MOCVD grown β - G a 2 O 3 with hydrogen plasma treatment
Che, Congcong, Fang, Paiwen, Feng, Wenyong, Zhang, Yiming, Chen, Haibiao, Cheng, Shengliang, Hu, Huichao, Liang, Jun, Pei, Yanli
Published in Semiconductor science and technology (30.05.2025)
Published in Semiconductor science and technology (30.05.2025)
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Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs
Yang, Fan, Li, Xinxin, Ren, Yuke, Li, Shuti, Zheng, Shuwen
Published in Semiconductor science and technology (30.05.2025)
Published in Semiconductor science and technology (30.05.2025)
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Low temperature UV assisted water based solution processing: investigation of structural, optical, and electrical characteristics of yttrium oxide thin films
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High performance solar-blind photodetectors based on MOCVD grown β- Ga2O3 with hydrogen plasma treatment
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Published in Semiconductor science and technology (30.05.2025)
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Characterization of Cr implanted GaAs processed with ArF and Nd-YAG laser melting
Algaidy, Sari, Caudevilla, Daniel, Benítez-Fernández, Rafael, Duarte-Cano, Sebastián, Pérez-Zenteno, Francisco, García-Hernansanz, Rodrigo, San Andres, Enrique, García-Hemme, Eric, Olea, Javier, Siegel, Jan, Gonzalo, Jose, Pastor, David, Del Prado, Alvaro
Published in Semiconductor science and technology (30.05.2025)
Published in Semiconductor science and technology (30.05.2025)
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The effects of sequential annealing in NO and wet-O2 on interfacial properties and reliability of 4H-SiC (0001) MOS devices
Lu, Wenhao, Ge, Niannian, Wan, Caiping, Xu, Hengyu, Jin, Zhi, Ye, Tianchun, Zhou, Jingtao
Published in Semiconductor science and technology (30.05.2025)
Published in Semiconductor science and technology (30.05.2025)
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Broadband photodetectors based on PbS quantum dots synthesized using the multiple injection growth method
Feng, Wenzhi, Wen, Shuai, Qin, Rui, Wang, Jiuhong, Li, Qing, Ma, Tao, Liu, Huan
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Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Faustmann, Anton, Liebisch, Patrick, Bennemann, Benjamin, Perla, Pujitha, Ion Lepsa, Mihail, Pawlis, Alexander, Grützmacher, Detlev, Knoch, Joachim, Schäpers, Thomas
Published in Semiconductor science and technology (30.05.2025)
Published in Semiconductor science and technology (30.05.2025)
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Modification of TiO2 template with In2S3 for quasi-epitaxial growth of Sb2S3 thin film solar cells
Zhan, Ya-Lu, Li, Hu, Cai, Jin-Rui, Zhang, Jun-Cai, Cai, Li-Ping, Lin, Li-Mei, Huang, Zhi-Ping, Chen, Gui-Lin
Published in Semiconductor science and technology (30.05.2025)
Published in Semiconductor science and technology (30.05.2025)
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Simplified top-down fabrication of sub-micron silicon nanowires
Zare Pakzad, Sina, Akinci, Seckin, Karimzadehkhouei, Mehrdad, Alaca, B Erdem
Published in Semiconductor science and technology (01.12.2023)
Published in Semiconductor science and technology (01.12.2023)
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