Search Results - "Semiconductor Structures" :: K.UTB vyhledávací portál

A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

by Martinez Loran, Erick, von Gastrow, Guillaume, Clenney, Jacob, Contreras-Torres, Flavio F., Meier, Rico, Bertoni, Mariana I., Bandaru, Prabhakar, Fenning, David P.
Published in physica status solidi (b) (01.03.2022)

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RESEARCH OF VOLTAMPER CHARACTERISTICS OF SEMICONDUCTOR STRUCTURES AND DEVICES

by E.A. Pecherskaya, O.V. Karpanin, D.E. Nelyutskovа, M.A. Nelyutskov, V.S. Aleksandrov, A.E. Zhurina
Published in Измерение, мониторинг, управление, контроль (01.10.2024)

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A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

by Martinez Loran, Erick, von Gastrow, Guillaume, Clenney, Jacob, Contreras-Torres, Flavio F., Meier, Rico, Bertoni, Mariana I., Bandaru, Prabhakar, Fenning, David P.
Published in Physica Status Solidi B. Basic Solid State Physics (26.12.2021)

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A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

by Martinez Loran, Erick, von Gastrow, Guillaume, Clenney, Jacob, Contreras-Torres, Flavio F., Meier, Rico, Bertoni, Mariana I., Bandaru, Prabhakar, Fenning, David P.
Published in Physica Status Solidi B. Basic Solid State Physics (11.12.2021)

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EXCITATION OF MAGNETOPLASMA OSCILLATIONS IN SEMICONDUCTOR STRUCTURES BY FLUXES OF CHARGED PARTICLES

by Serkov, Aleksandr, Breslavets, Vitaliy, Yakovenko, Igor, Fomenko, Andrii
Published in Сучасні інформаційні системи (18.10.2021)

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ELECTROMAGNETIC COMPATIBILITY OF SEMICONDUCTOR STRUCTURES WITH A TWO-DIMENSIONAL ELECTRON LAYER

by Kravchenko, Volodymyr, Knyazev, Volodymyr, Serkov, Aleksandr, Breslavets, Vitaliy, Yakovenko, Igor
Published in Сучасні інформаційні системи (23.12.2019)

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EXCITATION OF SURFACE VIBRATIONS OF SEMICONDUCTOR STRUCTURES EXPOSED TO EXTERNAL ELECTROMAGNETIC RADIATION

by Serkov, Aleksandr, Breslavets, Vitaliy, Yakovenko, Igor, Dziabenko, Olga
Published in Сучасні інформаційні системи (28.11.2018)

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Modeling of Nanoscale Devices : Devices and components subject to quantum and atomistic effects, such as layered semiconductor structures, nanoscale transistors, carbon nanotubes and nanowires may be modeled using quantum analysis and simulation methods

by ANANTRAM, M. P, LUNDSTROM, Mark S, NIKONOV, Dmitri E
Published in Proceedings of the IEEE (2008)

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Analyzing conductance-frequency curves of metal-insulator-semiconductor structures subject to surface-potential fluctuations and electrically active states inside the insulator

by Avdeev, N. A., Klimov, I. V., Yakovlev, R. A.
Published in Russian microelectronics (01.11.2007)

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ELECTROMAGNETIC COMPATIBILITY OF SEMICONDUCTOR DEVICES EXPOSED TO TRANSITION RADIATION

by Knyazev, Volodymyr, Serkov, Aleksandr, Breslavets, Vitaliy, Yakovenko, Igor
Published in Сучасні інформаційні системи (08.07.2019)

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Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry

by Trattner, Sigal, Cheng, Bin, Pieniazek, Radoslaw L., Hoffmann, Udo, Douglas, Pamela S., Einstein, Andrew J.
Published in Medical physics (Lancaster) (01.04.2014)

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