Influence of the chemical properties of the substrate on silicon quantum dot nucleation
MAZEN, F, BARON, T, BREMOND, G, BUFFET, N, ROCHAT, N, MUR, P, SEMERIA, M. N
Published in Journal of the Electrochemical Society (01.03.2003)
Published in Journal of the Electrochemical Society (01.03.2003)
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Journal Article
Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates
Hartmann, J.M., Abbadie, A., Vinet, M., Clavelier, L., Holliger, P., Lafond, D., Séméria, M.N., Gentile, P.
Published in Journal of crystal growth (01.09.2003)
Published in Journal of crystal growth (01.09.2003)
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Journal Article
SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition
Hartmann, J.M, Loup, V, Rolland, G, Holliger, P, Laugier, F, Vannuffel, C, Séméria, M.N
Published in Journal of crystal growth (01.03.2002)
Published in Journal of crystal growth (01.03.2002)
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Journal Article
Low thermal budget surface preparation of Si and SiGe
Abbadie, A., Hartmann, J.M., Holliger, P., Séméria, M.N., Besson, P., Gentile, P.
Published in Applied surface science (30.03.2004)
Published in Applied surface science (30.03.2004)
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Journal Article
Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors
Hartmann, J.M., Bertin, F., Rolland, G., Laugier, F., Séméria, M.N.
Published in Journal of crystal growth (01.12.2003)
Published in Journal of crystal growth (01.12.2003)
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Journal Article
Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments
Hernandez, M., Venturini, J., Zahorski, D., Boulmer, J., Débarre, D., Kerrien, G., Sarnet, T., Laviron, C., Semeria, M.N., Camel, D., Santailler, J.L.
Published in Applied surface science (15.03.2003)
Published in Applied surface science (15.03.2003)
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Journal Article
Gas immersion laser doping (GILD) for ultra-shallow junction formation
Kerrien, G., Sarnet, T., Débarre, D., Boulmer, J., Hernandez, M., Laviron, C., Semeria, M.-N.
Published in Thin solid films (01.04.2004)
Published in Thin solid films (01.04.2004)
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Journal Article
Nucleation control of CVD growth silicon nanocrystals for quantum devices
Baron, T., Mazen, F., Busseret, C., Souifi, A., Mur, P., Fournel, F., Séméria, M.N., Moriceau, H., Aspard, B., Gentile, P., Magnea, N.
Published in Microelectronic engineering (01.07.2002)
Published in Microelectronic engineering (01.07.2002)
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Journal Article
Conference Proceeding
Effect of HCl on the SiGe growth kinetics in reduced pressure—chemical vapor deposition
Hartmann, J.M., Champay, F., Loup, V., Rolland, G., Séméria, M.N.
Published in Journal of crystal growth (01.05.2002)
Published in Journal of crystal growth (01.05.2002)
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Journal Article
Optical characterization of laser processed ultra-shallow junctions
Kerrien, G., Hernandez, M., Laviron, C., Sarnet, T., Débarre, D., Noguchi, T., Zahorski, D., Venturini, J., Semeria, M.N., Boulmer, J.
Published in Applied surface science (15.03.2003)
Published in Applied surface science (15.03.2003)
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Journal Article
XPS, Raman spectroscopy, X-ray diffraction, specular X-ray reflectivity, transmission electron microscopy and elastic recoil detection analysis of emissive carbon film characterization
Ermolieff, A., Chabli, A., Pierre, F., Rolland, G., Rouchon, D., Vannuffel, C., Vergnaud, C., Baylet, J., Séméria, M. N.
Published in Surface and interface analysis (01.03.2001)
Published in Surface and interface analysis (01.03.2001)
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Journal Article
Reduced pressure chemical vapour deposition of Si/Si1−x−yGexCy heterostructures using a chlorinated chemistry
Loup, V, Hartmann, J M, Rolland, G, Holliger, P, Laugier, F, Lafond, D, Séméria, M N, Besson, P, Gentile, P
Published in Semiconductor science and technology (01.04.2003)
Published in Semiconductor science and technology (01.04.2003)
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Journal Article
Influence of carrier and doping gases on silicon quantum dots nucleation
Mazen, F, Baron, T, Hartmann, J.M, Brémond, G, Séméria, M.N
Published in Journal of crystal growth (01.08.2003)
Published in Journal of crystal growth (01.08.2003)
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Journal Article
Reduced pressure–chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 μm photo-detection
Masarotto, L, Hartmann, J.M, Bremond, G, Rolland, G, Papon, A.M, Séméria, M.N
Published in Journal of crystal growth (01.07.2003)
Published in Journal of crystal growth (01.07.2003)
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Journal Article
Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O
Gosset, L.G., Damlencourt, J.-F., Renault, O., Rouchon, D., Holliger, Ph, Ermolieff, A., Trimaille, I., Ganem, J.-J., Martin, F., Séméria, M.-N.
Published in Journal of non-crystalline solids (01.05.2002)
Published in Journal of non-crystalline solids (01.05.2002)
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Journal Article
Conference Proceeding
Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices
Mur, P, Semeria, M.N, Olivier, M, Papon, A.M, Leroux, Ch, Reimbold, G, Gentile, P, Magnea, N, Baron, T, Clerc, R, Ghibaudo, G
Published in Applied surface science (15.05.2001)
Published in Applied surface science (15.05.2001)
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