Electromigration in submicron interconnect features of integrated circuits
Ceric, H., Selberherr, S.
Published in Materials science & engineering. R, Reports : a review journal (04.02.2011)
Published in Materials science & engineering. R, Reports : a review journal (04.02.2011)
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Journal Article
Emerging memory technologies: Trends, challenges, and modeling methods
Makarov, A., Sverdlov, V., Selberherr, S.
Published in Microelectronics and reliability (01.04.2012)
Published in Microelectronics and reliability (01.04.2012)
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Journal Article
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon
Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S.
Published in IEEE transactions on electron devices (01.09.2007)
Published in IEEE transactions on electron devices (01.09.2007)
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Journal Article
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
de Orio, R.L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.
Published in Solid-state electronics (01.06.2020)
Published in Solid-state electronics (01.06.2020)
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Journal Article
Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures
Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.
Published in Microelectronic engineering (01.11.2015)
Published in Microelectronic engineering (01.11.2015)
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Journal Article
Electromigration reliability of open TSV structures
Zisser, W.H., Ceric, H., Weinbub, J., Selberherr, S.
Published in Microelectronics and reliability (01.09.2014)
Published in Microelectronics and reliability (01.09.2014)
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Journal Article
Conference Proceeding
SIMON-A simulator for single-electron tunnel devices and circuits
Wasshuber, C., Kosina, H., Selberherr, S.
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.09.1997)
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.09.1997)
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Journal Article
Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches
Sellier, J.M., Amoroso, S.M., Nedjalkov, M., Selberherr, S., Asenov, A., Dimov, I.
Published in Physica A (15.03.2014)
Published in Physica A (15.03.2014)
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Journal Article
Electromigration failure in a copper dual-damascene structure with a through silicon via
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Journal Article
Conference Proceeding
Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., de Orio, R.L., Selberherr, S.
Published in Microelectronic engineering (02.04.2015)
Published in Microelectronic engineering (02.04.2015)
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Journal Article
Stress evolution in the metal layers of TSVs with Bosch scallops
Singulani, A.P., Ceric, H., Selberherr, S.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Journal Article
Conference Proceeding
A compact model for early electromigration failures of copper dual-damascene interconnects
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Journal Article
Conference Proceeding
Physical scales in the Wigner–Boltzmann equation
Nedjalkov, M., Selberherr, S., Ferry, D.K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I., Schwaha, P.
Published in Annals of physics (01.01.2013)
Published in Annals of physics (01.01.2013)
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Journal Article
Electron mobility model for strained-Si devices
Dhar, S., Kosina, H., Palankovski, V., Ungersboeck, S.E., Selberherr, S.
Published in IEEE transactions on electron devices (01.04.2005)
Published in IEEE transactions on electron devices (01.04.2005)
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Journal Article
Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels
Osintsev, D., Sverdlov, V., Stanojević, Z., Makarov, A., Selberherr, S.
Published in Solid-state electronics (01.05.2012)
Published in Solid-state electronics (01.05.2012)
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Journal Article
Conference Proceeding