Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
Kensaku Motoki, Kensaku Motoki, Takuji Okahisa, Takuji Okahisa, Naoki Matsumoto, Naoki Matsumoto, Masato Matsushima, Masato Matsushima, Hiroya Kimura, Hiroya Kimura, Hitoshi Kasai, Hitoshi Kasai, Kikurou Takemoto, Kikurou Takemoto, Koji Uematsu, Koji Uematsu, Tetsuya Hirano, Tetsuya Hirano, Masahiro Nakayama, Masahiro Nakayama, Seiji Nakahata, Seiji Nakahata, Masaki Ueno, Masaki Ueno, Daijirou Hara, Daijirou Hara, Yoshinao Kumagai, Yoshinao Kumagai, Akinori Koukitu, Akinori Koukitu, Hisashi Seki, Hisashi Seki
Published in Japanese Journal of Applied Physics (01.01.2001)
Published in Japanese Journal of Applied Physics (01.01.2001)
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Journal Article
Growth and characterization of freestanding GaN substrates
Motoki, Kensaku, Okahisa, Takuji, Nakahata, Seiji, Matsumoto, Naoki, Kimura, Hiroya, Kasai, Hitoshi, Takemoto, Kikurou, Uematsu, Koji, Ueno, Masaki, Kumagai, Yoshinao, Koukitu, Akinori, Seki, Hisashi
Published in Journal of crystal growth (01.04.2002)
Published in Journal of crystal growth (01.04.2002)
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Journal Article
Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides
Koukitu, Akinori, Taki, Tetsuya, Takahashi, Naoyuki, Seki, Hisashi
Published in Journal of crystal growth (01.02.1999)
Published in Journal of crystal growth (01.02.1999)
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Journal Article
Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs (111)A and (111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
Yoshinao Kumagai, Yoshinao Kumagai, Akinori Koukitu, Akinori Koukitu, Hisashi Seki, Hisashi Seki
Published in Japanese Journal of Applied Physics (2000)
Published in Japanese Journal of Applied Physics (2000)
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Journal Article
Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy
Koukitu, Akinori, Kumagai, Yoshinao, Seki, Hisashi
Published in Journal of crystal growth (01.12.2000)
Published in Journal of crystal growth (01.12.2000)
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Journal Article
Conference Proceeding
Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
Yoshinao Kumagai, Yoshinao Kumagai, Hisashi Murakami, Hisashi Murakami, Akinori Koukitu, Akinori Koukitu, Kikurou Takemoto, Kikurou Takemoto, Hisashi Seki, Hisashi Seki
Published in Japanese Journal of Applied Physics (2000)
Published in Japanese Journal of Applied Physics (2000)
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Journal Article
Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
Akinori Koukitu, Akinori Koukitu, Yoshinao Kumagai, Yoshinao Kumagai, Tetsuya Taki, Tetsuya Taki, Hisashi Seki, Hisashi Seki
Published in Japanese Journal of Applied Physics (01.09.1999)
Published in Japanese Journal of Applied Physics (01.09.1999)
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Journal Article
Thermodynamics on halide vapor-phase epitaxy of InN using incl and InCl3
KUMAGAI, Yoshinao, TAKEMOTO, Kikurou, KOUKITU, Akinori, SEKI, Hisashi
Published in Journal of crystal growth (2001)
Published in Journal of crystal growth (2001)
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Journal Article
Growth of InN at high temperature by halide vapor phase epitaxy
TAKAHASHI, N, MATSUMOTO, R, KOUKITU, A, SEKI, H
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Journal Article
Growth of GaN on GaAs(111)B by metalorganic hydrogen chloride VPE using double buffer layer
TAKAHASHI, N, MATSUKI, S, KOUKITU, A, SEKI, H
Published in Japanese Journal of Applied Physics (15.09.1997)
Published in Japanese Journal of Applied Physics (15.09.1997)
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Journal Article