Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
Naito, Tatsuya, Tamura, Chihiro, Inumiya, Seiji, Hasunuma, Ryu, Yamabe, Kikuo
Published in Japanese Journal of Applied Physics (01.05.2007)
Published in Japanese Journal of Applied Physics (01.05.2007)
Get full text
Journal Article
Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
Inumiya, Seiji, Miura, Takayoshi, Shirai, Kiyoshi, Matsuki, Takeo, Torii, Kazuyoshi, Nara, Yasuo
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
Get full text
Journal Article
Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors
Matsuki, Takeo, Inumiya, Seiji, Mise, Nobuyuki, Eimori, Takahisa, Nara, Yasuo
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
Get full text
Journal Article
Photoemission Study of Metal/HfSiON Gate Stack
Miyazaki, Seiichi, Yoshinaga, Hiromichi, Ohta, Akio, Akasaka, Yasushi, Shiraishi, Kenji, Yamada, Keisaku, Inumiya, Seiji, Kadoshima, Masaru, Nara, Yasuo
Published in ECS transactions (09.05.2008)
Published in ECS transactions (09.05.2008)
Get full text
Journal Article
Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)
Miyazaki, Seiichi, Ohta, Akio, Inumiya, Seiji, Nara, Yasuo, Yamada, Keisaku
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
Get full text
Journal Article
Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics
Hirano, I., Nakasaki, Y., Fukatsu, S., Masada, A., Mitani, Y., Goto, M., Nagatomo, K., Inumiya, S., Sekine, K.
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
Get full text
Conference Proceeding
Characterization of high-k materials for the advancement of high-speed ULSIs
Nishiyama, Akira, Kamata, Yoshiki, Iijima, Ryosuke, Koike, Masahiro, Ino, Tsunehiro, Koyama, Masato, Kamimuta, Yuuichi, Ono, Mizuki, Suzuki, Masamichi, Hongo, Chie, Takashima, Akira, Kaneko, Akio, Inumiya, Seiji, Takayanagi, Mariko
Published in E-journal of surface science and nanotechnology (2003)
Published in E-journal of surface science and nanotechnology (2003)
Get full text
Journal Article
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing
Hirano, Izumi, Nakasaki, Yasushi, Fukatsu, Shigeto, Goto, Masakazu, Nagatomo, Koji, Inumiya, Seiji, Sekine, Katsuyuki, Mitani, Yuichiro, Yamabe, Kikuo
Published in Microelectronics and reliability (01.12.2013)
Published in Microelectronics and reliability (01.12.2013)
Get full text
Journal Article
Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices
Kobayashi, Hitoshi, Ohguro, Tatsuya, Kai, Tetsuya, Motai, Takako, Ogawa, Masaaki, Matsuo, Mie, Oohashi, Kenichi, Kozumi, Shinsuke, Takada, Yoshiharu, Kojima, Hideharu, Masuko, Shingo, Yonezawa, Naoki, Komatsu, Akira, Nishiwaki, Tatsuya, Hara, Takuma, Takahashi, Mari, Ezaki, Akira, Ohtsuka, Kenichi, Inumiya, Seiji, Suguro, Kyoichi
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Get full text
Conference Proceeding
Hf-based high-k gate dielectrics - Scalability for hp45 node and beyond
Yasuo Nara, Seiji Inumiya, Kamiyama, S., Kunio Nakamura
Published in 2006 International Workshop on Nano CMOS (01.01.2006)
Published in 2006 International Workshop on Nano CMOS (01.01.2006)
Get full text
Conference Proceeding
High-k/metal gate stack technology for advanced CMOS
Nara, Y., Ootsuka, F., Inumiya, S., Ohji, Y.
Published in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (2006)
Published in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (2006)
Get full text
Conference Proceeding
Improvement of threshold voltage deviation in damascene metal gate transistors
Yagishita, A., Saito, T., Nakajima, K., Inumiya, S., Matsuo, K., Shibata, T., Tsunashima, Y., Suguro, K., Arikado, T.
Published in IEEE transactions on electron devices (01.08.2001)
Published in IEEE transactions on electron devices (01.08.2001)
Get full text
Journal Article
High-Mobility and Low-Vth Metal Gate CMOSFETs with Ultra-Thin HfSiON Gate Dielectrics Using TaSiN/TaSix Stacked Electrode and Selective Substrate Fluorine Implantation
Inumiya, Seiji, Matsuki, Takeo, Aoyama, Takayuki, Nara, Yasuo
Published in ECS transactions (27.04.2007)
Published in ECS transactions (27.04.2007)
Get full text
Journal Article
Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-k/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
Sato, Motoyuki, Yamabe, Kikuo, Shiraishi, Kenji, Miyazaki, Seiichi, Yamada, Keisaku, Tamura, Chihiro, Hasunuma, Ryu, Inumiya, Seiji, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
Get full text
Journal Article