Effect of Treatment in Nitrogen Plasma on the Electrical Parameters of AlGaN/GaN Heterostructures
Enisherlova, K. L., Seidman, L. A., Bogolyubova, S. Yu
Published in Russian microelectronics (01.12.2022)
Published in Russian microelectronics (01.12.2022)
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Journal Article
Formation of Defects Forming Deep Levels in SiON/AlGaN/GaN Structures
Enisherlova, K. L., Mikhaylov, I. A., Seidman, L. A., Kirilenko, E. P., Kolkovsky, Yu. V.
Published in Russian microelectronics (01.12.2023)
Published in Russian microelectronics (01.12.2023)
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Accumulation of cadmium by the fourth instar larva of the fly Chironomus thummi
Seidman, Lisa A., Bergtrom, Gerald, Gingrich, David J., Remsen, Charles C.
Published in Tissue & cell (1986)
Published in Tissue & cell (1986)
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Processes during annealing of Ti–Al–Ni and Ti–Al–Ni–Au contact metallization systems
Vanyukhin, K. D., Zakharchenko, R. V., Kargin, N. I., Pashkov, M. V., Seidman, L. A.
Published in Russian microelectronics (01.12.2015)
Published in Russian microelectronics (01.12.2015)
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Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices
Enisherlova, K. L., Kulikauskas, V. S., Seidman, L. A., Pishchagin, V. V., Konovalov, A. M., Korneev, V. I.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.07.2015)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.07.2015)
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