Vacancy defects as compensating centers in Mg-doped GaN
Hautakangas, S, Oila, J, Alatalo, M, Saarinen, K, Liszkay, L, Seghier, D, Gislason, H P
Published in Physical review letters (04.04.2003)
Published in Physical review letters (04.04.2003)
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Effects of cobalt doping on the electrical properties of MBE-grown ZnO
Seghier, D., Gislason, H. P.
Published in Journal of materials science. Materials in electronics (01.09.2011)
Published in Journal of materials science. Materials in electronics (01.09.2011)
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Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy
Seghier, D., Gislason, H. P.
Published in Journal of materials science. Materials in electronics (01.09.2008)
Published in Journal of materials science. Materials in electronics (01.09.2008)
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Conference Proceeding
Gallium and nitrogen vacancies in GaN: Impurity decoration effects
Hautakangas, S., Ranki, V., Makkonen, I., Puska, M.J., Saarinen, K., Liszkay, L., Seghier, D., Gislason, H.P., Freitas, Jr, J.A., Henry, R.L., Xu, X., Look, D.C.
Published in Physica. B, Condensed matter (01.04.2006)
Published in Physica. B, Condensed matter (01.04.2006)
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Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy
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Conference Proceeding
Noise spectroscopy on defects with thermally activated capture in GaAs
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Conference Proceeding