Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
Dashiell, M.W., Troeger, R.T., Rommel, S.L., Adam, T.N., Berger, P.R., Guedj, C., Kolodzey, J., Seabaugh, A.C., Lake, R.
Published in IEEE transactions on electron devices (01.09.2000)
Published in IEEE transactions on electron devices (01.09.2000)
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Journal Article
Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities
Rommel, S.L., Dillon, T.E., Berger, P.R., Thompson, P.E., Hobart, K.D., Lake, R., Seabaugh, A.C.
Published in IEEE electron device letters (01.07.1999)
Published in IEEE electron device letters (01.07.1999)
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Journal Article
Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit
Moise, T.S., Seabaugh, A.C., Beam, E.A., Randall, J.N.
Published in IEEE electron device letters (01.09.1993)
Published in IEEE electron device letters (01.09.1993)
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Journal Article
A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
Broekaert, T.P.E., Brar, B., van der Wagt, J.P.A., Seabaugh, A.C., Morris, F.J., Moise, T.S., Beam, E.A., Frazier, G.A.
Published in IEEE journal of solid-state circuits (01.09.1998)
Published in IEEE journal of solid-state circuits (01.09.1998)
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Journal Article
RTD/HFET low standby power SRAM gain cell
van der Wagt, J.P.A., Seabaugh, A.C., Beam, E.A.
Published in IEEE electron device letters (01.01.1998)
Published in IEEE electron device letters (01.01.1998)
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Journal Article
Epitaxial Si-based tunnel diodes
Thompson, P.E, Hobart, K.D, Twigg, M.E, Rommel, S.L, Jin, N, Berger, P.R, Lake, R, Seabaugh, A.C, Chi, P.H, Simons, D.S
Published in Thin solid films (22.12.2000)
Published in Thin solid films (22.12.2000)
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Journal Article
Conference Proceeding
Tunnel diode integrated circuits
Seabaugh, A.C.
Published in 2000 IEEE International Symposium on Circuits and Systems (ISCAS) (2000)
Published in 2000 IEEE International Symposium on Circuits and Systems (ISCAS) (2000)
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Conference Proceeding
The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In 0.48Ga 0.52P/GaAs and In 0.53Ga 0.47As/InP heterojunction bipolar device structures
Beam, E.A., Chau, H.F., Henderson, T.S., Liu, W., Seabaugh, A.C.
Published in Journal of crystal growth (1994)
Published in Journal of crystal growth (1994)
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Journal Article
Monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter
Broekaert, T.P.E., Brar, B., van der Wagt, J.P.A., Seabaugh, A.C., Moise, T.S., Morris, F.J., Beam, E.A., Frazier, G.A.
Published in Computer standards and interfaces (01.06.1999)
Published in Computer standards and interfaces (01.06.1999)
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Journal Article
Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two-dimensional electron gas transistors
Wilkins, R., Shojah-Ardalan, S., Kirk, W.P., Spencer, G.F., Bate, R.T., Seabaugh, A.C., Lake, R., Stelmaszyk, P., Wieck, A.D., Fogarty, T.N.
Published in IEEE transactions on nuclear science (01.12.1999)
Published in IEEE transactions on nuclear science (01.12.1999)
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Journal Article
The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems
BEAM, E. A, HENDERSON, T. S, SEABAUGH, A. C, YANG, J. Y
Published in Journal of crystal growth (01.02.1992)
Published in Journal of crystal growth (01.02.1992)
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Journal Article
The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In 0.53Ga 0.47As/InP and In 0.48Ga 0.52P/GaAs materials systems
Beam, E.A., Henderson, T.S., Seabaugh, A.C., Yang, J.Y.
Published in Journal of crystal growth (1992)
Published in Journal of crystal growth (1992)
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Journal Article
Co-integration of resonant tunneling and double heterojunction bipolar transistors on InP
Seabaugh, A.C., Beam, E.A., Taddiken, A.H., Randall, J.N., Kao, Y.-C.
Published in IEEE electron device letters (01.10.1993)
Published in IEEE electron device letters (01.10.1993)
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Journal Article
Multibit resonant tunneling diode SRAM cell based on slew-rate addressing
van der Wagt, J.P.A., Tang, H., Broekaert, T.P.E., Seabaugh, A.C., Kao, Y.-C.
Published in IEEE transactions on electron devices (01.01.1999)
Published in IEEE transactions on electron devices (01.01.1999)
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Journal Article
Room-temperature operation of InGaAs-based hot-electron transistors
Moise, T.S., Seabaugh, A.C., Beam, E.A., Kao, Y.-C., Randall, J.N.
Published in IEEE transactions on electron devices (01.11.1993)
Published in IEEE transactions on electron devices (01.11.1993)
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Journal Article
The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures
BEAM, E. A, CHAU, H. F, HENDERSON, T. S, LIU, W, SEABAUGH, A. C
Published in Journal of crystal growth (01.03.1994)
Published in Journal of crystal growth (01.03.1994)
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Conference Proceeding
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