Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
DE LYON, T. J, BUCHAN, N. I, KIRCHNER, P. D, WOODALL, J. M, MCINTURFF, D. T, SCILLA, G. J, CARDONE, F
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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The effect of surface preparation on the production of low interfacial charge regrown interfaces
Kuech, T.F., Marshall, E., Scilla, G.J., Potemski, R., Ransom, C.M., Hung, M.Y.
Published in Journal of crystal growth (01.09.1986)
Published in Journal of crystal growth (01.09.1986)
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Journal Article
Graded-SiGe-base, poly-emitter heterojunction bipolar transistors
Patton, G.L., Harame, D.L., Stork, J.M.C., Meyerson, B.S., Scilla, G.J., Ganin, E.
Published in IEEE electron device letters (01.12.1989)
Published in IEEE electron device letters (01.12.1989)
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Journal Article
The control and modeling of doping profiles and transients in MOVPE growth
Kuech, T.F., Wang, P.-J., Tischler, M.A., Potemski, R., Scilla, G.J., Cardone, F.
Published in Journal of crystal growth (1988)
Published in Journal of crystal growth (1988)
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Journal Article
Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design
Harame, D.L., Stork, J.M.C., Meyerson, B.S., Nguyen, T.N., Scilla, G.J.
Published in IEEE electron device letters (01.04.1989)
Published in IEEE electron device letters (01.04.1989)
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Journal Article
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., de Fresart, E., Stork, J.M.C., Sun, J.Y.-C., Harame, D.L., Burghartz, J.N.
Published in IEEE electron device letters (01.04.1990)
Published in IEEE electron device letters (01.04.1990)
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Journal Article
Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology
Burghartz, J.N., Comfort, J.H., Patton, G.L., Meyerson, B.S., Sun, J.Y.-C., Stork, J.M.C., Mader, S.R., Stanis, C.L., Scilla, G.J., Ginsberg, B.J.
Published in IEEE electron device letters (01.07.1990)
Published in IEEE electron device letters (01.07.1990)
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Journal Article
63-75 GHz fT SiGe-base heterojunction bipolar technology
Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., de Fresart, E., Stork, J.M.C., Sun, J.Y.-C., Harame, D.L., Burghartz, J.
Published in Digest of Technical Papers.1990 Symposium on VLSI Technology (1990)
Published in Digest of Technical Papers.1990 Symposium on VLSI Technology (1990)
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Deep levels and minority carrier lifetime in MOVPE p-type GaAs
Wang, P.J., Kuech, T.F., Tischler, M.A., Mooney, P.M., Scilla, G.J., Cardone, F.
Published in Journal of crystal growth (1988)
Published in Journal of crystal growth (1988)
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SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process
Harame, D.L., Stork, J.M.C., Meyerson, B.S., Crabbe, E.F., Patton, G.L., Scilla, G.J., de Fresart, E., Bright, A.A., Stanis, C., Megdanis, A.C., Manny, M.P., Petrillo, E.J., Dimeo, M., McIntosh, R.C., Chan, K.K.
Published in Digest of Technical Papers.1990 Symposium on VLSI Technology (1990)
Published in Digest of Technical Papers.1990 Symposium on VLSI Technology (1990)
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Conference Proceeding
High performance Si and SiGe-base p-n-p transistors
Harame, D.L., Stork, J.M.C., Patton, G.L., Iyer, S.S., Meyerson, B.S., Scilla, G.J., Crabbe, E.F., Ganin, E.
Published in Technical Digest., International Electron Devices Meeting (1988)
Published in Technical Digest., International Electron Devices Meeting (1988)
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30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors
Harame, D.L., Stork, J.M.C., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., de Fresart, E., Megdanis, A.E., Stanis, C.L., Patton, G.L., Comfort, J.H., Bright, A.A., Johnson, J.B., Furkay, S.S.
Published in International Technical Digest on Electron Devices (1990)
Published in International Technical Digest on Electron Devices (1990)
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