Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI
Avenier, G., Fregonese, S., Chevalier, P., Bustos, J., Saguin, F., Schwartzmann, T., Maneux, C., Zimmer, T., Chantre, A.
Published in IEEE transactions on electron devices (01.02.2008)
Published in IEEE transactions on electron devices (01.02.2008)
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Journal Article
Band-to-band tunneling in vertically scaled SiGe:C HBTs
Lagarde, D., Chevalier, P., Schwartzmann, T., Chantre, A.
Published in IEEE electron device letters (01.04.2006)
Published in IEEE electron device letters (01.04.2006)
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Journal Article
A selective epitaxy collector module for high-speed Si/SiGe:C HBTs
Geynet, B., Chevalier, P., Brossard, F., Vandelle, B., Schwartzmann, T., Buczko, M., Avenier, G., Dutartre, D., Dambrine, G., Danneville, F., Chantre, A.
Published in Solid-state electronics (01.08.2009)
Published in Solid-state electronics (01.08.2009)
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Journal Article
Conference Proceeding
A spice model for predicting static thermal coupling between bipolar transistors
Beckrich, H., Schwartzmann, T., Celif, D., Zimmer, T.
Published in Research in Microelectronics and Electronics, 2005 PhD (2005)
Published in Research in Microelectronics and Electronics, 2005 PhD (2005)
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Conference Proceeding
Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond
Bonnouvrier, J., Lenoble, D., Robilliart, E., Schwartzmann, T., Jaouen, H.
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)
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Conference Proceeding
Coupled Approach for Reliability Study of Fully Self Aligned SiGe:C 250GHz HBTs
Diop, M., Revil, N., Marin, M., Monsieur, F., Schwartzmann, T., Ghibaudo, G.
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
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Conference Proceeding
A self-aligned vertical HBT for thin SOI SiGeC BiCMOS
Avenier, G., Schwartzmann, T., Chevalier, P., Vandelle, B., Rubaldo, L., Dutartre, D., Boissonnet, L., Saguin, F., Pantel, R., Fregonese, S., Maneux, C., Zimmer, T., Chantre, A.
Published in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 (2005)
Published in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 (2005)
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Conference Proceeding
New Method for Oxide Capacitance Extraction
Raya, C., Schwartzmann, T., Chevalier, P., Pourchon, F., Celi, D., Zimmer, T.
Published in 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.09.2007)
Published in 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.09.2007)
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Conference Proceeding
Coupled Approach for Reliability Study of Fully Self Aligned SiGe: C 250GHz HBTs
Diop, M., Revil, N., Marin, M., Monsieur, F., Schwartzmann, T., Ghibaudo, G.
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
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Conference Proceeding
250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector
Chevalier, P., Raya, C., Geynet, B., Pourchon, F., Judong, F., Saguin, F., Schwartzmann, T., Pantel, R., Vandelle, B., Rubaldo, L., Avenier, G., Barbalat, B., Chantre, A.
Published in 2006 Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2006)
Published in 2006 Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2006)
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Conference Proceeding
A 12.7dBm IIP3, 1.34dB NF, 4.9GHz–5.9GHz 802.11a/n LNA in 0.13 µm PD-SOI CMOS with Body-Contacted transistor
Paulin, R., Cathelin, P., Bertrand, G., Monroy, A., More-He, J., Schwartzmann, T.
Published in 2016 IEEE MTT-S International Microwave Symposium (IMS) (01.05.2016)
Published in 2016 IEEE MTT-S International Microwave Symposium (IMS) (01.05.2016)
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Conference Proceeding
Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI
Chantre, Alain, Avenier, Gregory, Boissonnet, Laurence, Borot, Gael, Bouillon, Pierre, Brossard, Florence, Chevalier, Pascal, Deleglise, Florence, Dutartre, Didier, Duvernay, Julien, Fregonese, Sebastien, Judong, Fabienne, Pantel, Roland, Perrotin, Andre, Rauber, Bruno, Rubaldo, Laurent, Saguin, Fabienne, Schwartzmann, Thierry, Vandelle, Benoit, Zimmer, Thomas
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
An experimental and simulation study of pnp Si/SiGeC HBTs using box-like Ge profiles
Duvernay, J., Borot, G., Chevalier, P., Dutartre, D., Pantel, R., Rubaldo, L., Schwartzmann, T., Vandelle, B., Chantre, A.
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
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Conference Proceeding
Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs
Barbalat, B., Schwartzmann, T., Chevalier, P., Jagueneau, T., Vandelle, B., Rubaldo, L., Saguin, F., Zerounian, N., Aniel, F., Chantre, A.
Published in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 (2005)
Published in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 (2005)
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Conference Proceeding
100GHz SiGe:C HBTs using non selective base epitaxy
Martinet, B., Baudry, H., Kermarrec, O., Campidelli, Y., Laurens, M., Marty, M., Schwartzmann, T., Monroy, A., Bensahel, D., Chantre, A.
Published in 31st European Solid-State Device Research Conference (2001)
Published in 31st European Solid-State Device Research Conference (2001)
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Conference Proceeding
High-Voltage HBTs Compatible with High-Speed SiGe BiCMOS Technology
Geynet, B., Chevalier, P., Chouteau, S., Avenier, G., Schwartzmann, T., Gloria, D., Dambrine, G., Danneville, F., Chantre, A.
Published in 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01.01.2008)
Published in 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01.01.2008)
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Conference Proceeding
Low-cost self-aligned SiGeC HBT module for high-performance bulk and SOI RFCMOS platforms
Chevalier, P., Lagarde, D., Avenier, G., Schwartzmann, T., Barbalat, B., Lenoble, D., Bustos, J., Pourchon, F., Saguin, F., Vandelle, B., Rubaldo, L., Chantre, A.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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Conference Proceeding
Carbon effect on neutral base recombination in high-speed SiGeC HBTs
Barbalat, B., Schwartzmann, T., Chevalier, P., Vandelle, B., Rubaldo, L., Saguin, F., Zerounian, N., Aniel, F., Chantre, A.
Published in 2006 International SiGe Technology and Device Meeting (2006)
Published in 2006 International SiGe Technology and Device Meeting (2006)
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Conference Proceeding
Multi-die power synchronization
FLINT OWEN, FISHEL LIOR, SCHWARTZMANN, ANDREAS, ZIMMET, LASZLO, ZAHIR ARASH R, SODHI INDER M
Year of Publication 09.02.2024
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Year of Publication 09.02.2024
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