Cryogenic Characterization of the High Frequency and Noise Performance of SiGe HBTs From DC to 70 GHz and Down to 2 K
Bonen, S., Cooke, G., Jager, T., Bharadwaj, A., Tripathi, S. Pati, Celi, D., Chevalier, P., Schvan, P., Voinigescu, S. P.
Published in IEEE microwave and wireless components letters (01.06.2022)
Published in IEEE microwave and wireless components letters (01.06.2022)
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Journal Article
Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio
Terry Yao, Gordon, M.Q., Tang, K.K.W., Yau, K.H.K., Ming-Ta Yang, Schvan, P., Voinigescu, S.P.
Published in IEEE journal of solid-state circuits (01.05.2007)
Published in IEEE journal of solid-state circuits (01.05.2007)
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Journal Article
A Low Noise, DC-135GHz MOS-HBT Distributed Amplifier for Receiver Applications
Hoffman, James, Voinigescu, Sorin P., Chevalier, P., Cathelin, Andreia, Schvan, P.
Published in 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2015)
Published in 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2015)
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Conference Proceeding
A 92GHz bandwidth SiGe BiCMOS HBT TIA with less than 6dB noise figure
Vasilakopoulos, K., Voinigescu, S. P., Schvan, P., Chevalier, P., Cathelin, A.
Published in 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM (01.10.2015)
Published in 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM (01.10.2015)
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Conference Proceeding
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
Voinigescu, S.P., Maliepaard, M.C., Showell, J.L., Babcock, G.E., Marchesan, D., Schroter, M., Schvan, P., Harame, D.L.
Published in IEEE journal of solid-state circuits (01.09.1997)
Published in IEEE journal of solid-state circuits (01.09.1997)
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Journal Article
Low-Voltage Topologies for 40-Gb/s Circuits in Nanoscale CMOS
Chalvatzis, T., Yau, K.H.K., Aroca, R.A., Schvan, P., Ming-Ta Yang, Voinigescu, S.P.
Published in IEEE journal of solid-state circuits (01.07.2007)
Published in IEEE journal of solid-state circuits (01.07.2007)
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Conference Proceeding
A fully integrated SiGe receiver IC for 10-Gb/s data rate
Greshishchev, Y.M., Schvan, P., Showell, J.L., Mu-Liang Xu, Ojha, J.J., Rogers, J.E.
Published in IEEE journal of solid-state circuits (01.12.2000)
Published in IEEE journal of solid-state circuits (01.12.2000)
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Journal Article
Design and characterization of submicron BiCMOS compatible high-voltage NMOS and PMOS devices
Yong Qiang Li, Salama, A.T., Seufert, M., Schvan, P., King, M.
Published in IEEE transactions on electron devices (01.02.1997)
Published in IEEE transactions on electron devices (01.02.1997)
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Journal Article
A fully integrated SiGe receiver IC for 10Gb/s data rate
Greshishchev, Y M, Schvan, P, Showell, J L, Xu, M-L, Ojha, J J, Rogers, J E
Published in Digest of technical papers - IEEE International Solid-State Circuits Conference (01.01.2000)
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Published in Digest of technical papers - IEEE International Solid-State Circuits Conference (01.01.2000)
Journal Article
A 40GS/s 6b ADC in 65nm CMOS
Greshishchev, Y.M., Aguirre, J., Besson, M., Gibbins, R., Falt, C., Flemke, P., Ben-Hamida, N., Pollex, D., Schvan, P., Shing-Chi Wang
Published in 2010 IEEE International Solid-State Circuits Conference - (ISSCC) (01.02.2010)
Published in 2010 IEEE International Solid-State Circuits Conference - (ISSCC) (01.02.2010)
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Conference Proceeding
A 40 Gb/s transimpedance amplifier in 65 nm CMOS
Bashiri, S, Plett, C, Aguirre, J, Schvan, P
Published in 2010 IEEE International Symposium on Circuits and Systems (ISCAS) (01.05.2010)
Published in 2010 IEEE International Symposium on Circuits and Systems (ISCAS) (01.05.2010)
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Conference Proceeding
A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
Voinigescu, S.P., Maliepaard, M.C., Schroter, M., Schvan, P., Harame, D.L.
Published in Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting (1996)
Published in Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting (1996)
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Conference Proceeding
A sub-micron BiCMOS technology for telecommunications
Hadaway, R., Kempf, P., Schvan, P., Rowlandson, M., Ho, V., Kolk, J., Tait, B., Sutherland, D., Jolly, G., Emesh, I.
Published in ESSDERC '91: 21st European Solid State Device Research Conference (1991)
Published in ESSDERC '91: 21st European Solid State Device Research Conference (1991)
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Conference Proceeding
Fully differential, 40 Gb/s regulated cascode transimpedance amplifier in 0.13 µm SiGe BiCMOS technology
Amid, S B, Plett, C, Schvan, P
Published in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2010)
Published in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2010)
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Conference Proceeding
Modeling of heat flow in multilayer cw laser-annealed structures
Waechter, D., Schvan, P., Thomas, R. E., Tarr, N. G.
Published in Journal of applied physics (15.05.1986)
Published in Journal of applied physics (15.05.1986)
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