Device Delay in GaN Transistors Under High Drain Bias Conditions
Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas
Published in IEEE electron device letters (01.07.2013)
Published in IEEE electron device letters (01.07.2013)
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Journal Article
Implications of Interfacial Thermal Transport on the Self-Heating of GaN-on-SiC High Electron Mobility Transistors
Shoemaker, Daniel C., Song, Yiwen, Kang, Kyuhwe, Schuette, Michael L., Tweedie, James S., Sheppard, Scott T., McIlwaine, Nathaniel S., Maria, Jon-Paul, Choi, Sukwon
Published in IEEE transactions on electron devices (01.10.2023)
Published in IEEE transactions on electron devices (01.10.2023)
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Journal Article
Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT
DONG SEUP LEE, HAN WANG, SAUNIER, Paul, PALACIOS, Tomás, ALLEN HSU, AZIZE, Mohamed, LABOUTIN, Oleg, YU CAO, JOHNSON, Jerry Wayne, BEAM, Edward, KETTERSON, Andrew, SCHUETTE, Michael L
Published in IEEE electron device letters (21.06.2013)
Published in IEEE electron device letters (21.06.2013)
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Journal Article
Passivation of surface and interface states in AlGaN/GaN HEMT structures by annealing
KIM, Hyeongnam, SCHUETTE, Michael L, LEE, Jaesun, WU LU, MABON, James C
Published in Journal of electronic materials (01.09.2007)
Published in Journal of electronic materials (01.09.2007)
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Journal Article
Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz
Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul
Published in IEEE electron device letters (01.06.2013)
Published in IEEE electron device letters (01.06.2013)
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Journal Article
Nanowire Channel InAlN/GaN HEMTs With High Linearity of g and f
Lee, Dong Seup, Wang, Han, Hsu, Allen, Azize, Mohamed, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas
Published in IEEE electron device letters (01.08.2013)
Published in IEEE electron device letters (01.08.2013)
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Journal Article
InAlN Barrier Scaled Devices for Very High f and for Low-Voltage RF Applications
Saunier, Paul, Schuette, Michael L., Tso-Min Chou, Hua-Quen Tserng, Ketterson, Andrew, Beam, Edward, Pilla, Manyam, Xiang Gao
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
InAIN Barrier Scaled Devices for Very High fT and for Low-Voltage RF Applications : GaN ELECTRONIC DEVICES
SAUNIER, Paul, SCHUETTE, Michael L, CHOU, Tso-Min, TSERNG, Hua-Quen, KETTERSON, Andrew, BEAM, Edward, PILLA, Manyam, XIANG GAO
Published in IEEE transactions on electron devices (2013)
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Published in IEEE transactions on electron devices (2013)
Journal Article
Improved Sensitivity of AlGaN/GaN Field Effect Transistor Biosensors by Optimized Surface Functionalization
Xuejin Wen, Schuette, M L, Gupta, S K, Nicholson, T R, Lee, S C, Wu Lu
Published in IEEE sensors journal (01.08.2011)
Published in IEEE sensors journal (01.08.2011)
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Journal Article
Gate-Recessed Integrated E/D GaN HEMT Technology With [Formula Omitted]
Schuette, Michael L, Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J, Xing, Huili Grace, Saunier, Paul
Published in IEEE electron device letters (01.06.2013)
Published in IEEE electron device letters (01.06.2013)
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Journal Article
Gate-Recessed Integrated E/D GaN HEMT Technology With syntax error at token
Schuette, Michael L, Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J, Xing, Huili Grace, Saunier, Paul
Published in IEEE electron device letters (01.06.2013)
Published in IEEE electron device letters (01.06.2013)
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Journal Article
Gate-recessed integrated E/D GaN HEMT technology with f T /f max >300 GHz
Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul
Published in IEEE electron device letters (01.06.2013)
Published in IEEE electron device letters (01.06.2013)
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Journal Article