A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi
Published in Applied physics express (07.11.2019)
Published in Applied physics express (07.11.2019)
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Journal Article
Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Sasaoka, Chiaki, Schowalter, Leo J., Amano, Hiroshi
Published in Applied physics letters (28.11.2022)
Published in Applied physics letters (28.11.2022)
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Journal Article
Design and characterization of a low-optical-loss UV-C laser diode
Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.09.2020)
Published in Japanese Journal of Applied Physics (01.09.2020)
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Journal Article
Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate
Kushimoto, Maki, Zhang, Ziyi, Honda, Yoshio, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.01.2022)
Published in Japanese Journal of Applied Physics (01.01.2022)
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Journal Article
The 2020 UV emitter roadmap
Amano, Hiroshi, Collazo, Ramón, Santi, Carlo De, Einfeldt, Sven, Funato, Mitsuru, Glaab, Johannes, Hagedorn, Sylvia, Hirano, Akira, Hirayama, Hideki, Ishii, Ryota, Kashima, Yukio, Kawakami, Yoichi, Kirste, Ronny, Kneissl, Michael, Martin, Robert, Mehnke, Frank, Meneghini, Matteo, Ougazzaden, Abdallah, Parbrook, Peter J, Rajan, Siddharth, Reddy, Pramod, Römer, Friedhard, Ruschel, Jan, Sarkar, Biplab, Scholz, Ferdinand, Schowalter, Leo J, Shields, Philip, Sitar, Zlatko, Sulmoni, Luca, Wang, Tao, Wernicke, Tim, Weyers, Markus, Witzigmann, Bernd, Wu, Yuh-Renn, Wunderer, Thomas, Zhang, Yuewei
Published in Journal of physics. D, Applied physics (09.12.2020)
Published in Journal of physics. D, Applied physics (09.12.2020)
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Journal Article
Manufacturability of high power ultraviolet-C light emitting diodes on bulk aluminum nitride substrates
Grandusky, James R., Zhong, Zhibai, Chen, Jasson, Leung, Charles, Schowalter, Leo J.
Published in Solid-state electronics (01.12.2012)
Published in Solid-state electronics (01.12.2012)
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Journal Article
Conference Proceeding
Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication
Schujman, Sandra B., Schowalter, Leo J., Bondokov, Robert T., Morgan, Kenneth E., Liu, Wayne, Smart, Joseph A., Bettles, Tim
Published in Journal of crystal growth (01.03.2008)
Published in Journal of crystal growth (01.03.2008)
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Journal Article
Conference Proceeding
Correlation between optical and electrical performance of mid-ultraviolet light-emitting diodes on AlN substrates
Moe, Craig G., Garrett, Gregory A., Grandusky, James R., Chen, Jianfeng, Rodak, Lee E., Rotella, Paul, Wraback, Michael, Schowalter, Leo J.
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate
Kushimoto, Maki, Zhang, Ziyi, Sugiyama, Naoharu, Honda, Yoshio, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi
Published in Applied physics express (01.05.2021)
Published in Applied physics express (01.05.2021)
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Journal Article
Report on the growth of bulk aluminum nitride and subsequent substrate preparation
Carlos Rojo, J., Slack, Glen A., Morgan, Kenneth, Raghothamachar, Balaji, Dudley, Michael, Schowalter, Leo J.
Published in Journal of crystal growth (01.10.2001)
Published in Journal of crystal growth (01.10.2001)
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Journal Article
Conference Proceeding
270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
Grandusky, James R, Chen, Jianfeng, Gibb, Shawn R, Mendrick, Mark C, Moe, Craig G, Rodak, Lee, Garrett, Gregory A, Wraback, Michael, Schowalter, Leo J
Published in Applied physics express (25.03.2013)
Published in Applied physics express (25.03.2013)
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Journal Article
Ultraviolet semiconductor laser diodes on bulk AlN
Kneissl, Michael, Yang, Zhihong, Teepe, Mark, Knollenberg, Cliff, Schmidt, Oliver, Kiesel, Peter, Johnson, Noble M., Schujman, Sandra, Schowalter, Leo J.
Published in Journal of applied physics (15.06.2007)
Published in Journal of applied physics (15.06.2007)
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Journal Article
Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
Carlos Rojo, J., Schowalter, Leo J., Gaska, Remis, Shur, Michael, Khan, M.A., Yang, J., Koleske, Daniel D.
Published in Journal of crystal growth (01.05.2002)
Published in Journal of crystal growth (01.05.2002)
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Journal Article
Some effects of oxygen impurities on AlN and GaN
Slack, Glen A., Schowalter, Leo J., Morelli, Donald, Freitas, Jaime A.
Published in Journal of crystal growth (01.12.2002)
Published in Journal of crystal growth (01.12.2002)
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Journal Article
Conference Proceeding