The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
Feil, Maximilian W., Huerner, Andreas, Puschkarsky, Katja, Schleich, Christian, Aichinger, Thomas, Gustin, Wolfgang, Reisinger, Hans, Grasser, Tibor
Published in Crystals (Basel) (01.12.2020)
Published in Crystals (Basel) (01.12.2020)
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Journal Article
Single- Versus Multi-Step Trap Assisted Tunneling Currents-Part I: Theory
Schleich, Christian, Waldhor, Dominic, Knobloch, Theresia, Zhou, Weifeng, Stampfer, Bernhard, Michl, Jakob, Waltl, Michael, Grasser, Tibor
Published in IEEE transactions on electron devices (01.08.2022)
Published in IEEE transactions on electron devices (01.08.2022)
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Journal Article
Toward Automated Defect Extraction From Bias Temperature Instability Measurements
Waldhoer, Dominic, Schleich, Christian, Michl, Jakob, Stampfer, Bernhard, Tselios, Konstantinos, Ioannidis, Eleftherios G., Enichlmair, Hubert, Waltl, Michael, Grasser, Tibor
Published in IEEE transactions on electron devices (01.08.2021)
Published in IEEE transactions on electron devices (01.08.2021)
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Journal Article
Physical Modelling of Charge Trapping Effects in SiC MOSFETs
Schleich, Christian, Vasilev, Aleksandr, Grasser, Tibor, Stampfer, Bernhard, Waltl, Michael, Waldhoer, Dominic
Published in Materials science forum (31.05.2023)
Published in Materials science forum (31.05.2023)
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Journal Article
TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
Vasilev, Alexander, Jech, Markus, Grill, Alexander, Rzepa, Gerhard, Schleich, Christian, Tyaginov, Stanislav, Makarov, Alexander, Pobegen, Gregor, Grasser, Tibor, Waltl, Michael
Published in IEEE transactions on electron devices (01.06.2022)
Published in IEEE transactions on electron devices (01.06.2022)
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Journal Article
Single- Versus Multi-Step Trap Assisted Tunneling Currents-Part II: The Role of Polarons
Schleich, Christian, Waldhor, Dominic, El-Sayed, Al-Moatasem, Tselios, Konstantinos, Kaczer, Ben, Grasser, Tibor, Waltl, Michael
Published in IEEE transactions on electron devices (01.08.2022)
Published in IEEE transactions on electron devices (01.08.2022)
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Journal Article
Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models
Waschneck, Katja, Schleich, Christian, Waltl, Michael, Hernandez, Yoanlys, Reisinger, Hans, Grasser, Tibor, Stampfer, Bernhard
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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Journal Article
Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
Waldhoer, Dominic, Schleich, Christian, Michl, Jakob, Grill, Alexander, Claes, Dieter, Karl, Alexander, Knobloch, Theresia, Rzepa, Gerhard, Franco, Jacopo, Kaczer, Ben, Waltl, Michael, Grasser, Tibor
Published in Microelectronics and reliability (01.07.2023)
Published in Microelectronics and reliability (01.07.2023)
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Journal Article
Lifetime Projection of Bipolar Operation of SiC DMOSFET
Grasser, Tibor, Waldhoer, Dominic, Waltl, Michael, Schleich, Christian, Vasilev, Aleksandr, Feil, Maximilian Wolfgang
Published in Materials science forum (05.06.2023)
Published in Materials science forum (05.06.2023)
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Journal Article
Impact of single-defects on the variability of CMOS inverter circuits
Waltl, Michael, Waldhoer, Dominic, Tselios, Konstantinos, Stampfer, Bernhard, Schleich, Christian, Rzepa, Gerhard, Enichlmair, Hubert, Ioannidis, Eleftherios G., Minixhofer, Rainer, Grasser, Tibor
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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Journal Article
Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations
Schleich, Christian, Pobegen, Gregor, Feil, Maximilian Wolfgang, Waltl, Michael, Rzepa, Gerhard, Vasilev, Aleksandr, Grasser, Tibor, Stampfer, Bernhard
Published in Materials science forum (31.05.2023)
Published in Materials science forum (31.05.2023)
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Journal Article
Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors
Feil, Maximilian W., Reisinger, Hans, Kabakow, André, Aichinger, Thomas, Schleich, Christian, Vasilev, Aleksandr, Waldhör, Dominic, Waltl, Michael, Gustin, Wolfgang, Grasser, Tibor
Published in Communications engineering (31.01.2023)
Published in Communications engineering (31.01.2023)
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Journal Article
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Vasilev, Alexander, Jech, Markus, Grill, Alexander, Rzepa, Gerhard, Schleich, Christian, Makarov, Alexander, Pobegen, Gregor, Grasser, Tibor, Waltl, Michael, Tyaginov, Stanislav
Published in 2020 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2020)
Published in 2020 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2020)
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Conference Proceeding
Identifying Defects in Charge Trapping Related Phenomena
Waldhoer, Dominic, Schleich, Christian, Michl, Jakob, Grasser, Tibor
Published in 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (18.09.2023)
Published in 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (18.09.2023)
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Conference Proceeding
An Efficient and Accurate DTCO Simulation Framework for Reliability and Variability-Aware Explorations of FinFETs, Nanosheets, and Beyond
Karner, Markus, Rzepa, Gerhard, Schleich, Christian, Schanovsky, Franz, Kernstock, Christian, Karner, Hui-Wen, Baumgartner, Oskar, Stanojevic, Zlatan
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
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Conference Proceeding
Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
Waldhoer, Dominic, Schleich, Christian, Michl, Jakob, Grill, Alexander, Claes, Dieter, Alexander, Karl, Knobloch, Theresia, Rzepa, Gerhard, Franco, Jacopo, Kaczer, Ben, Waltl, Michael, Grasser, Tibor
Published in arXiv.org (22.12.2022)
Published in arXiv.org (22.12.2022)
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Paper
Journal Article