An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well
Požela, Yu, Požela, K., Jucienė, V., Balakauskas, S., Evtikhiev, V. P., Schkolnik, A. S., Storasta, Yu, Mekys, A.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2007)
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