Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
Fiedler, A., Schewski, R., Baldini, M., Galazka, Z., Wagner, G., Albrecht, M., Irmscher, K.
Published in Journal of applied physics (28.10.2017)
Published in Journal of applied physics (28.10.2017)
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Journal Article
Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
Mazzolini, P., Falkenstein, A., Wouters, C., Schewski, R., Markurt, T., Galazka, Z., Martin, M., Albrecht, M., Bierwagen, O.
Published in APL materials (01.01.2020)
Published in APL materials (01.01.2020)
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Journal Article
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
Gogova, D., Wagner, G., Baldini, M., Schmidbauer, M., Irmscher, K., Schewski, R., Galazka, Z., Albrecht, M., Fornari, R.
Published in Journal of crystal growth (01.09.2014)
Published in Journal of crystal growth (01.09.2014)
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Journal Article
Conference Proceeding
On the nature and temperature dependence of the fundamental band gap of In2O3
Irmscher, K., Naumann, M., Pietsch, M., Galazka, Z., Uecker, R., Schulz, T., Schewski, R., Albrecht, M., Fornari, R.
Published in Physica status solidi. A, Applications and materials science (01.01.2014)
Published in Physica status solidi. A, Applications and materials science (01.01.2014)
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Journal Article
Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE
Bin Anooz, S, Grüneberg, R, Chou, T-S, Fiedler, A, Irmscher, K, Wouters, C, Schewski, R, Albrecht, M, Galazka, Z, Miller, W, Schwarzkopf, J, Popp, A
Published in Journal of physics. D, Applied physics (21.01.2021)
Published in Journal of physics. D, Applied physics (21.01.2021)
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Journal Article
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
Schewski, R., Baldini, M., Irmscher, K., Fiedler, A., Markurt, T., Neuschulz, B., Remmele, T., Schulz, T., Wagner, G., Galazka, Z., Albrecht, M.
Published in Journal of applied physics (14.12.2016)
Published in Journal of applied physics (14.12.2016)
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Journal Article
Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting
Schewski, R., Lion, K., Fiedler, A., Wouters, C., Popp, A., Levchenko, S. V., Schulz, T., Schmidbauer, M., Bin Anooz, S., Grüneberg, R., Galazka, Z., Wagner, G., Irmscher, K., Scheffler, M., Draxl, C., Albrecht, M.
Published in APL materials (01.02.2019)
Published in APL materials (01.02.2019)
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Journal Article
Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy
Bin Anooz, S., Popp, A., Grüneberg, R., Wouters, C., Schewski, R., Schmidbauer, M., Albrecht, M., Fiedler, A., Ramsteiner, M., Klimm, D., Irmscher, K., Galazka, Z., Wagner, G.
Published in Journal of applied physics (21.05.2019)
Published in Journal of applied physics (21.05.2019)
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Journal Article
Melt growth and properties of bulk BaSnO3 single crystals
Galazka, Z, Uecker, R, Irmscher, K, Klimm, D, Bertram, R, Kwasniewski, A, Naumann, M, Schewski, R, Pietsch, M, Juda, U, Fiedler, A, Albrecht, M, Ganschow, S, Markurt, T, Guguschev, C, Bickermann, M
Published in Journal of physics. Condensed matter (22.02.2017)
Published in Journal of physics. Condensed matter (22.02.2017)
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Journal Article
Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide
Albrecht, M., Schewski, R., Irmscher, K., Galazka, Z., Markurt, T., Naumann, M., Schulz, T., Uecker, R., Fornari, R., Meuret, S., Kociak, M.
Published in Journal of applied physics (07.02.2014)
Published in Journal of applied physics (07.02.2014)
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Journal Article
Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga 2 O 3 thin films grown by MOVPE
Bin Anooz, S, Grüneberg, R, Chou, T-S, Fiedler, A, Irmscher, K, Wouters, C, Schewski, R, Albrecht, M, Galazka, Z, Miller, W, Schwarzkopf, J, Popp, A
Published in Journal of physics. D, Applied physics (21.01.2021)
Published in Journal of physics. D, Applied physics (21.01.2021)
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Journal Article
Melt growth and properties of bulk BaSnO 3 single crystals
Galazka, Z, Uecker, R, Irmscher, K, Klimm, D, Bertram, R, Kwasniewski, A, Naumann, M, Schewski, R, Pietsch, M, Juda, U, Fiedler, A, Albrecht, M, Ganschow, S, Markurt, T, Guguschev, C, Bickermann, M
Published in Journal of physics. Condensed matter (22.02.2017)
Published in Journal of physics. Condensed matter (22.02.2017)
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Journal Article
On the nature and temperature dependence of the fundamental band gap of In 2 O 3
Irmscher, K., Naumann, M., Pietsch, M., Galazka, Z., Uecker, R., Schulz, T., Schewski, R., Albrecht, M., Fornari, R.
Published in Physica status solidi. A, Applications and materials science (01.01.2014)
Published in Physica status solidi. A, Applications and materials science (01.01.2014)
Get full text
Journal Article