Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
Parkin, S. S. P., Roche, K. P., Samant, M. G., Rice, P. M., Beyers, R. B., Scheuerlein, R. E., O’Sullivan, E. J., Brown, S. L., Bucchigano, J., Abraham, D. W., Lu, Yu, Rooks, M., Trouilloud, P. L., Wanner, R. A., Gallagher, W. J.
Published in Journal of applied physics (15.04.1999)
Published in Journal of applied physics (15.04.1999)
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Journal Article
A 10ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell
Scheuerlein, R, Gallagher, W, Parkin, S, Lee, A, Ray, S, Robertazzi, R, Reohr, W
Published in Digest of technical papers - IEEE International Solid-State Circuits Conference (01.01.2000)
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Published in Digest of technical papers - IEEE International Solid-State Circuits Conference (01.01.2000)
Journal Article
512-Mb PROM with a three-dimensional array of diode/antifuse memory cells
Johnson, M., Al-Shamma, A., Bosch, D., Crowley, M., Farmwald, M., Fasoli, L., Ilkbahar, A., Kleveland, B., Lee, T., Tz-yi Liu, Quang Nguyen, Scheuerlein, R., So, K., Thorp, T.
Published in IEEE journal of solid-state circuits (01.11.2003)
Published in IEEE journal of solid-state circuits (01.11.2003)
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Journal Article
Memories of tomorrow
Reohr, W., Viehmann, H., Scheuerlein, R., Li-Kong Wang, Trouilloud, P., Parkin, S., Gallagher, W., Muller, G., Honigschmid, H., Robertazzi, R., Gogl, D., Pesavento, F., Lammers, S., Lewis, K., Arndt, C., Yu Lu
Published in IEEE circuits and devices magazine (01.09.2002)
Published in IEEE circuits and devices magazine (01.09.2002)
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Journal Article
A pulsed sensing scheme with a limited bit-line swing
Scheuerlein, R.E., Katayama, Y., Kirihata, T., Sakaue, Y., Satoh, A., Sunaga, T., Yoshikawa, T., Kitamura, K., Dhong, S.H.
Published in IEEE journal of solid-state circuits (01.04.1992)
Published in IEEE journal of solid-state circuits (01.04.1992)
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Journal Article
A 22-ns 1-Mbit CMOS high-speed DRAM with address multiplexing
Lu, N.C.-C., Bronner, G.B., Kitamura, K., Scheuerlein, R.E., Henkels, W.H., Dhong, S.H., Katayama, Y., Kirihata, T., Niijima, H., Franch, R.L., Wang, W., Nishiwaki, M., Pesavento, F.L., Rajeevakumar, T.V., Sakaue, Y., Suzuki, Y., Iguchi, Y., Yano, E.
Published in IEEE journal of solid-state circuits (01.10.1989)
Published in IEEE journal of solid-state circuits (01.10.1989)
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Journal Article
A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's
Lu, N.C., Cottrell, P.E., Craig, W.J., Dash, S., Critchlow, D.L., Mohler, R.L., Machesney, B.J., Ning, T.H., Noble, W.P., Parent, R.M., Scheuerlein, R.E., Sprogis, E.J., Terman, L.M.
Published in IEEE journal of solid-state circuits (01.10.1986)
Published in IEEE journal of solid-state circuits (01.10.1986)
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Journal Article
Early quantitative method for measuring germination in nongreen spores of Dryopteris paleacea using an epifluorescence-microscope technique [fluorescence-emission spectrum]
Scheuerlein, R. (Erlangen-Nuernberg Univ., Erlangen (Germany, F.R.). Inst. fuer Botanik und Pharmazeutische Biologie), Wayne, R, Roux, S.J
Published in Physiologia plantarum (01.08.1988)
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Published in Physiologia plantarum (01.08.1988)
Journal Article
A large VDS data retention test pattern for DRAM's
FRANCH, R. L, DHONG, S. H, SCHEUERLEIN, R. E
Published in IEEE journal of solid-state circuits (01.08.1992)
Published in IEEE journal of solid-state circuits (01.08.1992)
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Journal Article
A 14-ns 4-Mb CMOS DRAM with 300-mW active power
KIRIHATA, T, DHONG, S. H, SAITOH, T, YOSHIKAWA, T, HASHIMOTO, H, KAZUSAWA, M, KITAMURA, K, SUNAGA, T, KATAYAMA, Y, SCHEUERLEIN, R. E, SATOH, A, SAKAUE, Y, TOBIMATSU, K, HOSOKAWA, K
Published in IEEE journal of solid-state circuits (1992)
Published in IEEE journal of solid-state circuits (1992)
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Journal Article