Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge
Pino-Monroy, Dayana A., Scheer, Patrick, Bouchoucha, Mohamed Khalil, Galup-Montoro, Carlos, Barragan, Manuel J., Cathelin, Philippe, Fournier, Jean-Michel, Cathelin, Andreia, Bourdel, Sylvain
Published in IEEE access (2022)
Published in IEEE access (2022)
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Corrections to "Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge"
Pino-Monroy, Dayana A., Scheer, Patrick, Bouchoucha, Mohamed Khalil, Galup-Montoro, Carlos, Barragan, Manuel J., Cathelin, Philippe, Fournier, Jean-Michel, Cathelin, Andreia, Bourdel, Sylvain
Published in IEEE access (2023)
Published in IEEE access (2023)
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Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses
Negre, L., Roy, D., Cacho, F., Scheer, P., Jan, S., Boret, S., Gloria, D., Ghibaudo, G.
Published in IEEE journal of solid-state circuits (01.05.2012)
Published in IEEE journal of solid-state circuits (01.05.2012)
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Conference Proceeding
Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data
Saha, Bishwadeep, Fregonese, Sebastien, Heinemann, Bernd, Scheer, Patrick, Chevalier, Pascal, Aufinger, Klaus, Chakravorty, Anjan, Zimmer, Thomas
Published in IEEE electron device letters (01.01.2021)
Published in IEEE electron device letters (01.01.2021)
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Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f MAX Estimation From Measured Data
Saha, Bishwadeep, Fregonese, Sebastien, Heinemann, Bernd, Scheer, Patrick, Chevalier, Pascal, Aufinger, Klaus, Chakravorty, Anjan, Zimmer, Thomas
Published in IEEE electron device letters (01.01.2021)
Published in IEEE electron device letters (01.01.2021)
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In-wafer variability in FD-SOI MOSFETs: detailed analysis and statistical modelling
Pradeep, Krishna, Scheer, Patrick, Poiroux, Thierry, Juge, André, Ghibaudo, Gérard
Published in Semiconductor science and technology (01.05.2020)
Published in Semiconductor science and technology (01.05.2020)
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Body resistance model for Partially Depleted SOI device: charge-based approach, extraction and Verilog-A implementation
Martinie, Sebastien, Vaysset, Adrien, Mourrier, Yannick, Scheer, Patrick, Rozeau, Olivier
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
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Conference Proceeding
Experimental gm/ID Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, André, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description
Poiroux, Thierry, Rozeau, O., Scheer, Patrick, Martinie, Sebastien, Jaud, Marie-Anne, Minondo, M., Juge, Andre, Barbe, J. C., Vinet, Maud
Published in IEEE transactions on electron devices (01.09.2015)
Published in IEEE transactions on electron devices (01.09.2015)
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Static and LFN/RTN Local and Global Variability Analysis Using an Addressable Array Test Structure
Gauthier, Owen, Haendler, Sebastien, Beucher, Ronan, Scheer, Patrick, Rafhay, Quentin, Theodorou, Christoforos
Published in 2023 35th International Conference on Microelectronic Test Structure (ICMTS) (27.03.2023)
Published in 2023 35th International Conference on Microelectronic Test Structure (ICMTS) (27.03.2023)
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Conference Proceeding
Experimental /} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, Andre, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies
Bouchoucha, Mohamed Khalil, Pino-Monroy, Dayana A., Scheer, Patrick, Cathelin, Philippe, Fournier, Jean-Michel, Barragan, Manuel J., Cathelin, Andreia, Bourdel, Sylvain
Published in 2023 IEEE International Symposium on Circuits and Systems (ISCAS) (21.05.2023)
Published in 2023 IEEE International Symposium on Circuits and Systems (ISCAS) (21.05.2023)
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Conference Proceeding
L-UTSOI: A compact model for low-power analog and digital applications in FDSOI technology
Martinie, Sebastien, Rozeau, Olivier, Poiroux, Thierry, Scheer, Patrick, Ghouli, Salim El, Kang, Mihyun, Juge, Andre, Lee, Harrison
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
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Conference Proceeding
Modeling of Doping Effects in Surface Potential Based Compact Model of Fully Depleted SOI MOSFET
Martinie, Sebastien, Rozeau, Olivier, Kolev, Plamen, Scheer, Patrick, Ghouli, Salim El, Juge, Andre, Lee, Harrison, Poiroux, Thierry
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2021)
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2021)
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Conference Proceeding
Revisited RF Compact Model of Gate Resistance Suitable for High-K/Metal Gate Technology
Dormieu, B., Scheer, P., Charbuillet, C., Jaouen, H., Danneville, F.
Published in IEEE transactions on electron devices (01.01.2013)
Published in IEEE transactions on electron devices (01.01.2013)
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