Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate
Paek, J. H., Nishiwaki, T., Yamaguchi, M., Sawaki, N.
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
Annealing effect on threading dislocations in a GaN grown on Si substrate
Iwata, H., Kobayashi, H., Kamiya, T., Kamei, R., Saka, H., Sawaki, N., Irie, M., Honda, Y., Amano, H.
Published in Journal of crystal growth (15.06.2017)
Published in Journal of crystal growth (15.06.2017)
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Journal Article
Resonant Raman and FTIR spectra of carbon doped GaN
Ito, S., Kobayashi, H., Araki, K., Suzuki, K., Sawaki, N., Yamashita, K., Honda, Y., Amano, H.
Published in Journal of crystal growth (15.03.2015)
Published in Journal of crystal growth (15.03.2015)
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Journal Article
Growth of non-polar (1 1 2¯ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE
Tanikawa, T., Rudolph, D., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Conference Proceeding
Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE
Tanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N.
Published in Physica status solidi. C (01.07.2008)
Published in Physica status solidi. C (01.07.2008)
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Journal Article
Structural and optical properties of a catalyst-free GaAs/AlGaAs core–shell nano/microwire grown on (1 1 1)Si substrate
Paek, J.H., Nishiwaki, T., Yamaguchi, M., Sawaki, N.
Published in Physica. E, Low-dimensional systems & nanostructures (01.09.2010)
Published in Physica. E, Low-dimensional systems & nanostructures (01.09.2010)
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Conference Proceeding
Al doping in ( 1 − 101 ) GaN films grown on patterned (001)Si substrate
Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N.
Published in Journal of applied physics (15.05.2007)
Published in Journal of applied physics (15.05.2007)
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Journal Article
MOVPE growth and properties of GaN on (1 1 1)Si using an AlInN intermediate layer
Irie, M., Koide, N., Honda, Y., Yamaguchi, M., Sawaki, N.
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Journal Article
Conference Proceeding
Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si
Tanikawa, T., Kagohashi, Y., Honda, Y., Yamaguchi, M., Sawaki, N.
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Conference Proceeding
Analysis of deep levels in n -type GaN by transient capacitance methods
Hacke, P., Detchprohm, T., Hiramatsu, K., Sawaki, N., Tadatomo, K., Miyake, K.
Published in Journal of applied physics (01.07.1994)
Published in Journal of applied physics (01.07.1994)
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Journal Article
MBE growth of one-dimensionally ordered AlInAs quantum dots on a patterned GaAs substrate
Nishiwaki, T, Yamaguchi, M, Sawaki, N
Published in Semiconductor science and technology (01.10.2008)
Published in Semiconductor science and technology (01.10.2008)
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Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation
Kim, B.-J., Tanikawa, T., Honda, Y., Yamaguchi, M., Sawaki, N.
Published in Physica. E, Low-dimensional systems & nanostructures (01.09.2010)
Published in Physica. E, Low-dimensional systems & nanostructures (01.09.2010)
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Journal Article
Conference Proceeding
MBE-VLS growth of GaAs nanowires on (111)Si substrate
Paek, J. H., Nishiwaki, T., Yamaguchi, M., Sawaki, N.
Published in Physica status solidi. C (01.07.2008)
Published in Physica status solidi. C (01.07.2008)
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Journal Article
Selective area growth of GaN microstructures on patterned (1 1 1) and (0 0 1) Si substrates
Honda, Y., Kawaguchi, Y., Ohtake, Y., Tanaka, S., Yamaguchi, M., Sawaki, N.
Published in Journal of crystal growth (01.09.2001)
Published in Journal of crystal growth (01.09.2001)
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Conference Proceeding
Percolation transport in an AlGaN/GaN heterostructure
Sawaki, N, Han, X X, Honda, Y, Yamaguchi, M
Published in Journal of physics. Conference series (01.11.2009)
Published in Journal of physics. Conference series (01.11.2009)
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Journal Article
p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE
Hikosaka, T., Koide, N., Honda, Y., Yamaguchi, M., Sawaki, N.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article
MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si
Honda, Y., Yanase, Y., Tsuji, M., Yamaguchi, M., Sawaki, N.
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Journal Article
Conference Proceeding
Negative magneto resistance in an Si delta-doped GaAs nano-structure
Nishikawa, M, Yamaguchi, M, Sawaki, N
Published in Journal of physics. Conference series (01.03.2008)
Published in Journal of physics. Conference series (01.03.2008)
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